Wafer-scale MOCVD grown WS2 with normally off transistor behavior and its general application on different amorphous substrates

Wen Chia Wu, Kuan Ning Huang, Chien Ying Su, Chi Chung Kei, Cheng Huang Kuo, Chao Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

In this study, we investigated various approaches to manipulate the flake density, size, and thickness of two-dimensional transition metal dichalcogenides by independently tuning the precursors and process conditions of the metal-organic chemical vapor deposition system. Normally off device characteristics were realized for both the as-grown and transferred cases.

Original languageEnglish
Article number183101
JournalApplied Physics Letters
Volume123
Issue number18
DOIs
StatePublished - 30 Oct 2023

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