Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers

Ray-Hua Horng, D. S. Wuu, C. H. Seieh, W. C. Peng, M. F. Huang, S. J. Tsai, J. S. Liu

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The feasibility of bonding 50-mm-diameter Si with a Au/AuBe mirror to AlGaInP light-emitting diode (LED) wafers is demonstrated. Wafer bonding over the entire wafer area is achieved while the metallic mirror still maintains high reflectivity. Using this technique, the mirror-substrate AlGaInP LEDs are fabricated across an entire 50-mm wafer. The test data show that 98% of the dice with operating voltages <2.2 V at 20 mA and 85% of the dice with luminous intensity in the 130∼140 mcd region. The wafer-bonded mirror-substrate LED lamps operating at 626 nm can emit 3 lm at 20 mA with a forward voltage of 2 V, corresponding to a luminous efficiency of 74 lm/W. Moreover, they present a peak power efficiency of 21% with 4 mW output at 10 mA (1.9 V). Essentially no degradation is observed for these LEDs after 2000 h stress at 80°C and 50 mA (55.6 A/cm2). The results indicate the mirror-substrate AlGaInP LEDs of highly reliable and efficient performance.

Original languageEnglish
Pages (from-to)907-910
Number of pages4
JournalJournal of Electronic Materials
Issue number8
StatePublished - Aug 2001


  • AlGaInP
  • Light-emitting diode (LED)
  • Mirror substrates
  • Wafer bonding


Dive into the research topics of 'Wafer bonding of 50-mm-diameter mirror substrates to AlGaInP light-emitting diode wafers'. Together they form a unique fingerprint.

Cite this