Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers

Po Chun Liu; Chin Yuan Hou; Yew-Chuhg Wu

doi:10.1016/j.tsf.2004.11.070

Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers

Po Chun Liu, Chin Yuan Hou, Yew-Chuhg Wu^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

A direct wafer-bonding technique has been used to fabricate high-brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, possibly causing degradation in the quality of the LED structure. In addition to this, misorientation between the two bonded wafers may have caused defects between the wafers. In this study, these two problems were solved by bonding the InGaP/GaAs and GaAs wafers with an indium tin oxide (ITO) polycrystalline film at temperatures below 650 °C. It was found that the bonding occurred mainly through the In transport from the InGaP to ITO, and that the electrical resistance decreased with the bonding temperature.

Original language	English
Pages (from-to)	280-285
Number of pages	6
Journal	Thin Solid Films
Volume	478
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.11.070
State	Published - 1 May 2005

Keywords

Electrical resistance
Indium tin oxide
LEDs
Light-emitting diodes
Wafer bonding

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10.1016/j.tsf.2004.11.070

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title = "Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers",

abstract = "A direct wafer-bonding technique has been used to fabricate high-brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, possibly causing degradation in the quality of the LED structure. In addition to this, misorientation between the two bonded wafers may have caused defects between the wafers. In this study, these two problems were solved by bonding the InGaP/GaAs and GaAs wafers with an indium tin oxide (ITO) polycrystalline film at temperatures below 650 °C. It was found that the bonding occurred mainly through the In transport from the InGaP to ITO, and that the electrical resistance decreased with the bonding temperature.",

keywords = "Electrical resistance, Indium tin oxide, LEDs, Light-emitting diodes, Wafer bonding",

author = "Liu, {Po Chun} and Hou, {Chin Yuan} and Yew-Chuhg Wu",

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AU - Liu, Po Chun

AU - Hou, Chin Yuan

AU - Wu, Yew-Chuhg

PY - 2005/5/1

Y1 - 2005/5/1

N2 - A direct wafer-bonding technique has been used to fabricate high-brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, possibly causing degradation in the quality of the LED structure. In addition to this, misorientation between the two bonded wafers may have caused defects between the wafers. In this study, these two problems were solved by bonding the InGaP/GaAs and GaAs wafers with an indium tin oxide (ITO) polycrystalline film at temperatures below 650 °C. It was found that the bonding occurred mainly through the In transport from the InGaP to ITO, and that the electrical resistance decreased with the bonding temperature.

AB - A direct wafer-bonding technique has been used to fabricate high-brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, possibly causing degradation in the quality of the LED structure. In addition to this, misorientation between the two bonded wafers may have caused defects between the wafers. In this study, these two problems were solved by bonding the InGaP/GaAs and GaAs wafers with an indium tin oxide (ITO) polycrystalline film at temperatures below 650 °C. It was found that the bonding occurred mainly through the In transport from the InGaP to ITO, and that the electrical resistance decreased with the bonding temperature.

KW - Electrical resistance

KW - Indium tin oxide

KW - LEDs

KW - Light-emitting diodes

KW - Wafer bonding

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IS - 1-2

ER -

Wafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layers

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Keywords

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