Wafer bonding by Ni-induced crystallization of amorphous silicon

Chun Ping Chao; Yew-Chuhg Wu; Tzu Ling Lee; Yuh Huah Wang

doi:10.1143/JJAP.42.5527

Wafer bonding by Ni-induced crystallization of amorphous silicon

Chun Ping Chao, Yew-Chuhg Wu^*, Tzu Ling Lee, Yuh Huah Wang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550°C. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350°C.

Original language	English
Pages (from-to)	5527-5530
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	9 A
DOIs	https://doi.org/10.1143/JJAP.42.5527
State	Published - Sep 2003

Keywords

Amorphous silicon
Metal-induced crystallization of amorphous silicon
Nickel and electric field
Wafer bonding

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10.1143/JJAP.42.5527

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title = "Wafer bonding by Ni-induced crystallization of amorphous silicon",

abstract = "Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550°C. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350°C.",

keywords = "Amorphous silicon, Metal-induced crystallization of amorphous silicon, Nickel and electric field, Wafer bonding",

author = "Chao, {Chun Ping} and Yew-Chuhg Wu and Lee, {Tzu Ling} and Wang, {Yuh Huah}",

year = "2003",

month = sep,

doi = "10.1143/JJAP.42.5527",

language = "English",

volume = "42",

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journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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T1 - Wafer bonding by Ni-induced crystallization of amorphous silicon

AU - Chao, Chun Ping

AU - Wu, Yew-Chuhg

AU - Lee, Tzu Ling

AU - Wang, Yuh Huah

PY - 2003/9

Y1 - 2003/9

N2 - Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550°C. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350°C.

AB - Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550°C. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350°C.

KW - Amorphous silicon

KW - Metal-induced crystallization of amorphous silicon

KW - Nickel and electric field

KW - Wafer bonding

UR - http://www.scopus.com/inward/record.url?scp=0345356982&partnerID=8YFLogxK

U2 - 10.1143/JJAP.42.5527

DO - 10.1143/JJAP.42.5527

M3 - Article

AN - SCOPUS:0345356982

SN - 0021-4922

VL - 42

SP - 5527

EP - 5530

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 A

ER -

Wafer bonding by Ni-induced crystallization of amorphous silicon

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