Wafer-bonded 850-nm vertical-cavity surface-emitting lasers on Si substrate with metal mirror

Ray-Hua Horng*, Dong Sing Wuu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


An 850-nm vertical-cavity surface-emitting laser (VCSEL) with a Au/AuBe/TaN/Ta/Si mirror substrate has been realized by low-temperature wafer bonding. It is found that the mirror substrate can be used as the bottom reflector to enhance the reflectivity of a bottom distributed Bragg reflector. The metal mirrors also served as the adhesive layers and ohmic contact layers to bond the Si substrate and the VCSEL epilayers. When the mirror-substrate-bonded VCSELs are excited by continuous-wave current at room temperature, they exhibit lower threshold current density and differential resistance (22 A/cm2, 35 Ω) as compared with the original VCSELs on GaAs substrates (77 A/cm2, 60 Ω). This feature is attributed to the finding that the Si substrate provides a good heat sink.

Original languageEnglish
Pages (from-to)5849-5852
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number9
StatePublished - Sep 2002


  • Distributed Bragg reflector
  • Mirror substrate
  • Vertical-cavity surface-emitting laser (VCSEL)
  • Wafer bonding


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