Abstract
An 850-nm vertical-cavity surface-emitting laser (VCSEL) with a Au/AuBe/TaN/Ta/Si mirror substrate has been realized by low-temperature wafer bonding. It is found that the mirror substrate can be used as the bottom reflector to enhance the reflectivity of a bottom distributed Bragg reflector. The metal mirrors also served as the adhesive layers and ohmic contact layers to bond the Si substrate and the VCSEL epilayers. When the mirror-substrate-bonded VCSELs are excited by continuous-wave current at room temperature, they exhibit lower threshold current density and differential resistance (22 A/cm2, 35 Ω) as compared with the original VCSELs on GaAs substrates (77 A/cm2, 60 Ω). This feature is attributed to the finding that the Si substrate provides a good heat sink.
| Original language | English |
|---|---|
| Pages (from-to) | 5849-5852 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 41 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2002 |
Keywords
- Distributed Bragg reflector
- Mirror substrate
- Vertical-cavity surface-emitting laser (VCSEL)
- Wafer bonding