Voltage and frequency dependence of differential capacitance in relaxed Ino0.2Ga0.8As/GaAs Schottky diodes

Jenn-Fang Chen*, Nie Chuan Chen, Jiin Shung Wang, Pai Yong Wang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Capacitance dispersion over frequency is investigated for relaxed In0.2Ga0.8As/GaAs Schottky diodes. While the high-frequency capacitance is voltage-independent, the low-frequency capacitance is seen to decrease with reverse voltage. Based on a Schottky barrier combined with a high-resistance layer containing traps, a simplified equation for the differential capacitance is derived to explain the capacitance-voltage-frequency relation. It is found that the high-frequency capacitance corresponds to the total thickness of the Schottky depletion and the high-resistance layer, while the low-frequency capacitance at a small reverse voltage is the Schottky depletion capacitance and at a large reverse voltage is the high-frequency capacitance.

Original languageEnglish
Pages (from-to)1102-1103
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number3 A
DOIs
StatePublished - 2000

Keywords

  • Capacitance dispersion
  • Deep traps
  • InGaAs/GaAs Schottky diodes

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