TY - GEN
T1 - Void ripening in Cu-Cu bonds
AU - Liu, Hung Che
AU - Gusak, A. M.
AU - Tu, K. N.
AU - Chen, Chih
N1 - Publisher Copyright:
© 2021 IEEE
PY - 2021/10/5
Y1 - 2021/10/5
N2 - Cu-Cu joints have potential in high performance electric product. Although the voids in the bonding interface was observed, there was no report on the size distribution and evolution of voids due to ripening. In this paper, the void size distribution under 200 °C for 30, 60 and 120 min is obtained by a specific direction. The average void diameter is 49 nm, 70 nm, and 96 nm for the joint annealed for 30, 60, and 120 min, respectively. A simple kinetic model of ripening is developed, and the relationship between radius and annealing time is in good agreement with experimental data.
AB - Cu-Cu joints have potential in high performance electric product. Although the voids in the bonding interface was observed, there was no report on the size distribution and evolution of voids due to ripening. In this paper, the void size distribution under 200 °C for 30, 60 and 120 min is obtained by a specific direction. The average void diameter is 49 nm, 70 nm, and 96 nm for the joint annealed for 30, 60, and 120 min, respectively. A simple kinetic model of ripening is developed, and the relationship between radius and annealing time is in good agreement with experimental data.
UR - http://www.scopus.com/inward/record.url?scp=85120421497&partnerID=8YFLogxK
U2 - 10.1109/LTB-3D53950.2021.9598384
DO - 10.1109/LTB-3D53950.2021.9598384
M3 - Conference contribution
AN - SCOPUS:85120421497
T3 - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
SP - 24
BT - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Y2 - 5 October 2021 through 11 October 2021
ER -