VERY THIN NITRIDE/OXIDE COMPOSITE GATE INSULATOR FOR VLSI CMOS.

L. Dori*, J. Sun, M. Arienzo, S. Basavaiah, Y. Taur, D. Zichermann

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

12 Scopus citations

Abstract

Excellent device characteristics are reported for both n-channel and p-channel (complementary) IGFETs (insulated gate field-effect transistors) with very thin nitride/oxide stacked gate insulators (10-14-nm equivalent oxide thickness). The top nitride layer (as thin as 4 nm) is effective in preventing boron penetration from the p** plus -poly gate to the channel. The threshold voltage instability and channel hot-carrier effects are controlled by using the very thin top nitride layer and complementary gate work work functions, i. e. , n** plus -poly for n-channel and p** plus -poly for p-channel IGFETs, respectively. Such composite insulators are regarded as very promising for submicrometer VLSI CMOS applications.

Original languageEnglish
Pages (from-to)25-26
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
StatePublished - 1987

Fingerprint

Dive into the research topics of 'VERY THIN NITRIDE/OXIDE COMPOSITE GATE INSULATOR FOR VLSI CMOS.'. Together they form a unique fingerprint.

Cite this