Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation

Ming Hao Kuo; Po Yu Hong; Ping Che Liu; Meng Chun Lee; Horng-Chih Lin; Tom George; Pei-Wen Li

doi:10.1364/OE.25.025467

Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO₂/SiGe photoMOSFETs under gate modulation

Ming Hao Kuo, Po Yu Hong, Ping Che Liu, Meng Chun Lee, Horng-Chih Lin, Tom George, Pei-Wen Li^*

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report a novel visible−near infrared photoMOSFET containing a self-organized, gate-stacking heterostructure of SiO₂/Ge-dot/SiO₂/SiGe-channel on Si substrate that is simultaneously fabricated in a single oxidation step. Our typical photoMOSFETs exhibit very large photoresponsivity of 1000−3000A/W at low optical power (< 0.1μW) or large photocurrent gain of 10³−10⁸A/A with a wide dynamic power range of at least 6 orders of magnitude (nW−mW) linearity at 400−1250 nm illumination, depending on whether the photoMOSFET operates at V_G = + 3− + 4.5V or −1− + 1V. Numerical simulations reveal that photocarrier confinement within the Ge dots and the SiGe channel modifies the oxide field and the surface potential of SiGe, significantly increasing photocurrent and improving linearity.

Original language	English
Pages (from-to)	25467-25476
Number of pages	10
Journal	Optics Express
Volume	25
Issue number	21
DOIs	https://doi.org/10.1364/OE.25.025467
State	Published - 16 Oct 2017

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title = "Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation",

abstract = "We report a novel visible−near infrared photoMOSFET containing a self-organized, gate-stacking heterostructure of SiO2/Ge-dot/SiO2/SiGe-channel on Si substrate that is simultaneously fabricated in a single oxidation step. Our typical photoMOSFETs exhibit very large photoresponsivity of 1000−3000A/W at low optical power (< 0.1μW) or large photocurrent gain of 103−108A/A with a wide dynamic power range of at least 6 orders of magnitude (nW−mW) linearity at 400−1250 nm illumination, depending on whether the photoMOSFET operates at VG = + 3− + 4.5V or −1− + 1V. Numerical simulations reveal that photocarrier confinement within the Ge dots and the SiGe channel modifies the oxide field and the surface potential of SiGe, significantly increasing photocurrent and improving linearity.",

author = "Kuo, {Ming Hao} and Hong, {Po Yu} and Liu, {Ping Che} and Lee, {Meng Chun} and Horng-Chih Lin and Tom George and Pei-Wen Li",

note = "Publisher Copyright: {\textcopyright}2017 Optical Society of America.",

year = "2017",

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day = "16",

doi = "10.1364/OE.25.025467",

language = "English",

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T1 - Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO2/SiGe photoMOSFETs under gate modulation

AU - Kuo, Ming Hao

AU - Hong, Po Yu

AU - Liu, Ping Che

AU - Lee, Meng Chun

AU - Lin, Horng-Chih

AU - George, Tom

AU - Li, Pei-Wen

PY - 2017/10/16

Y1 - 2017/10/16

N2 - We report a novel visible−near infrared photoMOSFET containing a self-organized, gate-stacking heterostructure of SiO2/Ge-dot/SiO2/SiGe-channel on Si substrate that is simultaneously fabricated in a single oxidation step. Our typical photoMOSFETs exhibit very large photoresponsivity of 1000−3000A/W at low optical power (< 0.1μW) or large photocurrent gain of 103−108A/A with a wide dynamic power range of at least 6 orders of magnitude (nW−mW) linearity at 400−1250 nm illumination, depending on whether the photoMOSFET operates at VG = + 3− + 4.5V or −1− + 1V. Numerical simulations reveal that photocarrier confinement within the Ge dots and the SiGe channel modifies the oxide field and the surface potential of SiGe, significantly increasing photocurrent and improving linearity.

AB - We report a novel visible−near infrared photoMOSFET containing a self-organized, gate-stacking heterostructure of SiO2/Ge-dot/SiO2/SiGe-channel on Si substrate that is simultaneously fabricated in a single oxidation step. Our typical photoMOSFETs exhibit very large photoresponsivity of 1000−3000A/W at low optical power (< 0.1μW) or large photocurrent gain of 103−108A/A with a wide dynamic power range of at least 6 orders of magnitude (nW−mW) linearity at 400−1250 nm illumination, depending on whether the photoMOSFET operates at VG = + 3− + 4.5V or −1− + 1V. Numerical simulations reveal that photocarrier confinement within the Ge dots and the SiGe channel modifies the oxide field and the surface potential of SiGe, significantly increasing photocurrent and improving linearity.

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U2 - 10.1364/OE.25.025467

DO - 10.1364/OE.25.025467

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AN - SCOPUS:85031331179

SN - 1094-4087

VL - 25

SP - 25467

EP - 25476

JO - Optics Express

JF - Optics Express

IS - 21

ER -

Very large photoresponsiviy and high photocurrent linearity for Ge-dot/SiO₂/SiGe photoMOSFETs under gate modulation

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