We report a novel visible−near infrared photoMOSFET containing a self-organized, gate-stacking heterostructure of SiO2/Ge-dot/SiO2/SiGe-channel on Si substrate that is simultaneously fabricated in a single oxidation step. Our typical photoMOSFETs exhibit very large photoresponsivity of 1000−3000A/W at low optical power (< 0.1μW) or large photocurrent gain of 103−108A/A with a wide dynamic power range of at least 6 orders of magnitude (nW−mW) linearity at 400−1250 nm illumination, depending on whether the photoMOSFET operates at VG = + 3− + 4.5V or −1− + 1V. Numerical simulations reveal that photocarrier confinement within the Ge dots and the SiGe channel modifies the oxide field and the surface potential of SiGe, significantly increasing photocurrent and improving linearity.
|Number of pages||10|
|State||Published - 16 Oct 2017|