Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics

Ming Hao Kuo; B. J. Liu; T. L. Huang; Horng-Chih Lin; Pei-Wen Li

doi:10.23919/SNW.2017.8242330

Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics

Ming Hao Kuo, B. J. Liu, T. L. Huang, Horng-Chih Lin, Pei-Wen Li

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400-1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 10³-10⁸A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for P_IN = 6nW-1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.

Original language	English
Title of host publication	2017 Silicon Nanoelectronics Workshop, SNW 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	127-128
Number of pages	2
ISBN (Electronic)	9784863486478
DOIs	https://doi.org/10.23919/SNW.2017.8242330
State	Published - 29 Dec 2017
Event	22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan Duration: 4 Jun 2017 → 5 Jun 2017

Publication series

Name	2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume	2017-January

Conference

Conference	22nd Silicon Nanoelectronics Workshop, SNW 2017
Country/Territory	Japan
City	Kyoto
Period	4/06/17 → 5/06/17

Access to Document

10.23919/SNW.2017.8242330

Cite this

Kuo, M. H., Liu, B. J., Huang, T. L., Lin, H.-C., & Li, P.-W. (2017). Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (pp. 127-128). Article 8242330 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242330

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title = "Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics",

abstract = "We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400-1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 103-108A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for PIN = 6nW-1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.",

author = "Kuo, {Ming Hao} and Liu, {B. J.} and Huang, {T. L.} and Horng-Chih Lin and Pei-Wen Li",

note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",

year = "2017",

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doi = "10.23919/SNW.2017.8242330",

language = "English",

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Kuo, MH, Liu, BJ, Huang, TL, Lin, H-C & Li, P-W 2017, Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics. in 2017 Silicon Nanoelectronics Workshop, SNW 2017., 8242330, 2017 Silicon Nanoelectronics Workshop, SNW 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 127-128, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 4/06/17. https://doi.org/10.23919/SNW.2017.8242330

Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics. / Kuo, Ming Hao; Liu, B. J.; Huang, T. L. et al.
2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 127-128 8242330 (2017 Silicon Nanoelectronics Workshop, SNW 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kuo, Ming Hao

AU - Liu, B. J.

AU - Huang, T. L.

AU - Lin, Horng-Chih

AU - Li, Pei-Wen

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N2 - We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400-1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 103-108A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for PIN = 6nW-1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.

AB - We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400-1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 103-108A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for PIN = 6nW-1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.

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Kuo MH, Liu BJ, Huang TL, Lin HC , Li PW. Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics. In 2017 Silicon Nanoelectronics Workshop, SNW 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 127-128. 8242330. (2017 Silicon Nanoelectronics Workshop, SNW 2017). doi: 10.23919/SNW.2017.8242330

Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics

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