Vertically-aligned indium nitride nanorod arrays as bright terahertz emitter

Hyeyoung Ahn; C. L. Pan

doi:10.1109/IPGC.2008.4781330

Vertically-aligned indium nitride nanorod arrays as bright terahertz emitter

Hyeyoung Ahn^*, C. L. Pan

^*Corresponding author for this work

Department of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The physical properties of vertically-aligned Nitride (InN) nanorod arrays grown on Si(111) by plasma-assisted molecular-beam epitaxy in (THz) spectral range has been elucidated by terahertz domain spectroscopy (THz-TDS) and their application as efficient THz emitter has been investigated. The key that determine the free carrier dynamics of the InN are extracted by applying a modified Drude model, includes the scattering effect of electrons along the of nanorods, while those of InN film are obtained by Drude model. Due to the large surface areas provided by the of nanorods, more than ten times of THz intensity compared to InN film is obtained for photoexcited nanorod array through the photo-Dember effect. However, power enhancement is selectively depending on the size of nanorods with respect to the thickness of surface accumulation layer.

Original language	English
Title of host publication	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
DOIs	https://doi.org/10.1109/IPGC.2008.4781330
State	Published - 1 Dec 2008
Event	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 - Singapore, Singapore Duration: 8 Dec 2008 → 11 Dec 2008

Publication series

Name	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Conference

Conference	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
Country/Territory	Singapore
City	Singapore
Period	8/12/08 → 11/12/08

Access to Document

10.1109/IPGC.2008.4781330

Cite this

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title = "Vertically-aligned indium nitride nanorod arrays as bright terahertz emitter",

abstract = "The physical properties of vertically-aligned Nitride (InN) nanorod arrays grown on Si(111) by plasma-assisted molecular-beam epitaxy in (THz) spectral range has been elucidated by terahertz domain spectroscopy (THz-TDS) and their application as efficient THz emitter has been investigated. The key that determine the free carrier dynamics of the InN are extracted by applying a modified Drude model, includes the scattering effect of electrons along the of nanorods, while those of InN film are obtained by Drude model. Due to the large surface areas provided by the of nanorods, more than ten times of THz intensity compared to InN film is obtained for photoexcited nanorod array through the photo-Dember effect. However, power enhancement is selectively depending on the size of nanorods with respect to the thickness of surface accumulation layer.",

author = "Hyeyoung Ahn and Pan, {C. L.}",

year = "2008",

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doi = "10.1109/IPGC.2008.4781330",

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series = "2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008",

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T1 - Vertically-aligned indium nitride nanorod arrays as bright terahertz emitter

AU - Ahn, Hyeyoung

AU - Pan, C. L.

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N2 - The physical properties of vertically-aligned Nitride (InN) nanorod arrays grown on Si(111) by plasma-assisted molecular-beam epitaxy in (THz) spectral range has been elucidated by terahertz domain spectroscopy (THz-TDS) and their application as efficient THz emitter has been investigated. The key that determine the free carrier dynamics of the InN are extracted by applying a modified Drude model, includes the scattering effect of electrons along the of nanorods, while those of InN film are obtained by Drude model. Due to the large surface areas provided by the of nanorods, more than ten times of THz intensity compared to InN film is obtained for photoexcited nanorod array through the photo-Dember effect. However, power enhancement is selectively depending on the size of nanorods with respect to the thickness of surface accumulation layer.

AB - The physical properties of vertically-aligned Nitride (InN) nanorod arrays grown on Si(111) by plasma-assisted molecular-beam epitaxy in (THz) spectral range has been elucidated by terahertz domain spectroscopy (THz-TDS) and their application as efficient THz emitter has been investigated. The key that determine the free carrier dynamics of the InN are extracted by applying a modified Drude model, includes the scattering effect of electrons along the of nanorods, while those of InN film are obtained by Drude model. Due to the large surface areas provided by the of nanorods, more than ten times of THz intensity compared to InN film is obtained for photoexcited nanorod array through the photo-Dember effect. However, power enhancement is selectively depending on the size of nanorods with respect to the thickness of surface accumulation layer.

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M3 - Conference contribution

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SN - 9781424429059

T3 - 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

BT - 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

T2 - 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Y2 - 8 December 2008 through 11 December 2008

ER -

Vertically-aligned indium nitride nanorod arrays as bright terahertz emitter

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