Vertical GaN MOSFET Power Devices

Catherine Langpoklakpam, An Chen Liu, Yi Kai Hsiao, Chun Hsiung Lin, Hao Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

3 Scopus citations


Gallium nitride (GaN) possesses remarkable characteristics such as a wide bandgap, high critical electric field, robust antiradiation properties, and a high saturation velocity for high-power devices. These attributes position GaN as a pivotal material for the development of power devices. Among the various GaN-based devices, vertical GaN MOSFETs stand out for their numerous advantages over their silicon MOSFET counterparts. These advantages encompass high-power device applications. This review provides a concise overview of their significance and explores their distinctive architectures. Additionally, it delves into the advantages of vertical GaN MOSFETs and highlights their recent advancements. In conclusion, the review addresses methods to enhance the breakdown voltage of vertical GaN devices. This comprehensive perspective underscores the pivotal role of vertical GaN MOSFETs in the realm of power electronics and their continual progress.

Original languageEnglish
Article number1937
Issue number10
StatePublished - Oct 2023


  • GaN power device
  • breakdown voltage
  • electric field
  • specific on-resistance


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