Vertical-channel organic thin-film transistors with meshed electrode and low leakage current

Hsiao-Wen Zan*, Kuo Hsi Yen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


In this study, we have successfully fabricated vertical-channel organic thin-film transistors with a channel length smaller than 100nm. It is found that Fowler-Nordheim tunneling is the dominant mechanism determining the ultra short-channel device behavior. To improve the gate control capability, a meshed source electrode pad had been used. This significantly lowers the gate and drain driving voltages (<10V), improves the saturation characteristics and reduces the leakage current. The improvement may be due to the fringing field around the source electrode, which suppresses the tunneling effect.

Original languageEnglish
Pages (from-to)3315-3318
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 A
StatePublished - 6 Jun 2007


  • Meshed electrode
  • OTFT
  • Pentacene
  • Vertical channel


Dive into the research topics of 'Vertical-channel organic thin-film transistors with meshed electrode and low leakage current'. Together they form a unique fingerprint.

Cite this