Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

Sergey A. Blokhin*, Nikolai A. Maleev, Alexander G. Kuzmenkov, Alexey V. Sakharov, Marina M. Kulagina, Yuri M. Shernyakov, Innokenty I. Novikov, Mikhail V. Maximov, Victor M. Ustinov, Alexey R. Kovsh, Sergey S. Mikhrin, Nikolai N. Ledentsov, Kuo-Jui Lin, Jim Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Scopus citations

Abstract

Molecular beam epitaxy-grown 0.98-μm vertical-cavity surface-emitting lasers (VCSELs) with a three-stack submonolayer (SML) InGaAs quantum-dot (QD) active region and fully doped AlxGa1-x As-GaAs DBRs was studied. Large-aperture VCSELs demonstrated internal optical losses less than 0.1% per one pass. Single-mode operation throughout the whole current range was observed for SML QD VCSELs with the tapered oxide apertures diameter less than 2 μm. Devices with 3-μm tapered-aperture showed high single-mode output power of 4 mW and external quantum efficiency of 68% at room temperature.

Original languageEnglish
Pages (from-to)851-858
Number of pages8
JournalIEEE Journal of Quantum Electronics
Volume42
Issue number9
DOIs
StatePublished - Sep 2006

Keywords

  • Distributed Bragg reflector (DBR)
  • Internal optical losses
  • Quantum dot (QD)
  • Single-mode
  • Thermal resistance
  • Vertical-cavity surface-emitting laser (VCSEL)

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