Vertical cavity single quantum well laser

J. L. Jewell; Kai-Feng Huang; K. Tai; Y. H. Lee; R. J. Fischer; S. L. McCall; A. Y. Cho

doi:10.1063/1.101885

Vertical cavity single quantum well laser

J. L. Jewell^*, Kai-Feng Huang, K. Tai, Y. H. Lee, R. J. Fischer, S. L. McCall, A. Y. Cho

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In_0.2Ga _0.8As. Limited gain due to the extremely short active material length of 80 Å implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm² at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm².

Original language	English
Pages (from-to)	424-426
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	5
DOIs	https://doi.org/10.1063/1.101885
State	Published - 1 Dec 1989

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@article{b611004899094012956d3b29673af372,

title = "Vertical cavity single quantum well laser",

abstract = "We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga 0.8As. Limited gain due to the extremely short active material length of 80 {\AA} implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm2 at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm2.",

author = "Jewell, {J. L.} and Kai-Feng Huang and K. Tai and Lee, {Y. H.} and Fischer, {R. J.} and McCall, {S. L.} and Cho, {A. Y.}",

year = "1989",

month = dec,

day = "1",

doi = "10.1063/1.101885",

language = "English",

volume = "55",

pages = "424--426",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Vertical cavity single quantum well laser

AU - Jewell, J. L.

AU - Huang, Kai-Feng

AU - Tai, K.

AU - Lee, Y. H.

AU - Fischer, R. J.

AU - McCall, S. L.

AU - Cho, A. Y.

PY - 1989/12/1

Y1 - 1989/12/1

N2 - We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga 0.8As. Limited gain due to the extremely short active material length of 80 Å implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm2 at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm2.

AB - We have achieved room-temperature pulsed and cw lasing at 980 nm in an optically pumped vertical cavity structure grown by molecular beam epitaxy containing only a single quantum well (SQW) of In0.2Ga 0.8As. Limited gain due to the extremely short active material length of 80 Å implies that losses due to absorption, scattering, and mirror transmission are extremely low. Using 10 ps pump pulses at 860 or 880 nm, the estimated energy density absorbed in the spacer was ∼12 fJ/μm2 at threshold, indicating a carrier density approximately four times that required for transparency. Continuous wave pumping yielded an estimated threshold absorbed intensity of ∼7 μW/μm2.

UR - http://www.scopus.com/inward/record.url?scp=0000086798&partnerID=8YFLogxK

U2 - 10.1063/1.101885

DO - 10.1063/1.101885

M3 - Article

AN - SCOPUS:0000086798

SN - 0003-6951

VL - 55

SP - 424

EP - 426

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Vertical cavity single quantum well laser

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