TY - JOUR
T1 - Variable-Channel Junctionless Poly-Si FETs
T2 - Demonstration and Investigation with Different Body Doping Concentrations
AU - Lin, Jer Yi
AU - Tsai, Chan Yi
AU - Shen, Chiuan Huei
AU - Chung, Chun Chih
AU - Kumar, Malkundi Puttaveerappa Vijay
AU - Chao, Tien-Sheng
PY - 2018/9/1
Y1 - 2018/9/1
N2 -
In this letter, tri-gate polycrystalline silicon variable-channel junctionless transistors (VC-JLTs), which consist of a counter-doped p-type body below an n
+
active device layer, are successfully demonstrated to show a better performance compared with conventional tri-gate nanosheet (NS) JLTs. Because the potential barrier between the n-channel and p-body in the VC-JLT can be controlled by the gate, the effective conduction channel behaves as a 'variable' channel, in which the conduction thickness is thinner or thicker than the physical n
+
thickness for the OFF or ON state, respectively. Consequently, the VC-JLT can turn OFF more efficiently due to the enhanced volume depletion and turn ON with a smaller series resistance owing to the augmented conduction volume. In addition, for the first time, the impact of the body doping concentration is investigated and the performance sensitivities of VC-JLTs in terms of I
ON
, V
T
, S.S., and DIBL are discussed with respect to the dopant redistribution. Furthermore, the quality factor (I
ON
/S.S.) of the VC-JLT is also benchmarked with recently published poly-Si JLTs, showing that the proposed VC-JLT exhibits good S.S. and a record I
ON
, which makes it as a promising device for 3-D integrated nanoelectronics.
AB -
In this letter, tri-gate polycrystalline silicon variable-channel junctionless transistors (VC-JLTs), which consist of a counter-doped p-type body below an n
+
active device layer, are successfully demonstrated to show a better performance compared with conventional tri-gate nanosheet (NS) JLTs. Because the potential barrier between the n-channel and p-body in the VC-JLT can be controlled by the gate, the effective conduction channel behaves as a 'variable' channel, in which the conduction thickness is thinner or thicker than the physical n
+
thickness for the OFF or ON state, respectively. Consequently, the VC-JLT can turn OFF more efficiently due to the enhanced volume depletion and turn ON with a smaller series resistance owing to the augmented conduction volume. In addition, for the first time, the impact of the body doping concentration is investigated and the performance sensitivities of VC-JLTs in terms of I
ON
, V
T
, S.S., and DIBL are discussed with respect to the dopant redistribution. Furthermore, the quality factor (I
ON
/S.S.) of the VC-JLT is also benchmarked with recently published poly-Si JLTs, showing that the proposed VC-JLT exhibits good S.S. and a record I
ON
, which makes it as a promising device for 3-D integrated nanoelectronics.
KW - body doping
KW - junctionless (JL)
KW - nanosheet (NS)
KW - polycrystalline silicon
KW - Variable channel (VC)
UR - http://www.scopus.com/inward/record.url?scp=85050372719&partnerID=8YFLogxK
U2 - 10.1109/LED.2018.2858227
DO - 10.1109/LED.2018.2858227
M3 - Article
AN - SCOPUS:85050372719
SN - 0741-3106
VL - 39
SP - 1326
EP - 1329
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 9
M1 - 8417437
ER -