Abstract
A microwave tunable high-Q active bandpass filter was developed using a varactor diode for tuning and a MESFET to provide negative resistance for increasing the tank circuit Q-value. Tuning ranges of 500 MHz for the one-pole filter and 430 MHz for the two-pole filter were achieved with a center frequency of 10 GHz. A 3-dB bandwidth of 20 MHz for the one-pole filter and 80 MHz for the two-pole filter was obtained. The passband insertion loss is typically 0 ± 1 dB.
Original language | English |
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Pages (from-to) | 499-502 |
Number of pages | 4 |
Journal | IEEE MTT-S International Microwave Symposium Digest |
Volume | 1 |
DOIs | |
State | Published - 1 Jan 1990 |
Event | 1990 IEEE MTT-S International Microwave Symposium Digest Part 1 (of 3) - Dallas, TX, USA Duration: 8 May 1990 → 10 May 1990 |