V-Band dual-conversion down-converter with schottky-diode ring-mixer using 0.35μm SiGe BiCMOS process

Jen Chieh Kao, Chin-Chun Meng, Tai Lin Lo, Guo Wei Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


A V-band dual-conversion downconverter using 0.35μm SiGe BiCMOS process is demonstrated in this paper. This downconverter contains three sub-circuits, a V-band Schottky-diode RF mixer with Marchand balun, a 15-GHz lownoise IF buffer amplifier, and an IF Gilbert mixer. The Schottky diode has high cutoff frequency because of the n+ buried layer in the SiGe BiCMOS process. Thus, a fundamental ring-mixer is employed as the RF mixer. A Marchand balun has a broadband feature, and the feature has been used to achieve converter for high frequency circuit applications. In addition to this, a lownoise buffer amplifier is used to provide enough gain performance. By combining these advantages, a dual-conversion downconverter is successfully achieved. The downconverter has about 6 dB conversion loss, 18 GHz RF bandwidth, 800 MHz IF bandwidth and about -6 dBm IP1dB when LO1 power is 5 dBm and LO2 power is 8 dBm.

Original languageEnglish
Title of host publication2015 Asia-Pacific Microwave Conference, APMC 2015 - Proceedings
EditorsWei Hong, Zhe Song, Guang-Qi Yang, Xiao-Wei Zhu, Fan Meng
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479987658
StatePublished - 17 Feb 2016
EventAsia-Pacific Microwave Conference, APMC 2015 - Nanjing, China
Duration: 6 Dec 20159 Dec 2015

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC


ConferenceAsia-Pacific Microwave Conference, APMC 2015


  • Dual-conversion downconverter
  • Marchand balun
  • Schottky diode mixer
  • Sige BiCMOS


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