TY - GEN
T1 - V-Band dual-conversion down-converter with schottky-diode ring-mixer using 0.35μm SiGe BiCMOS process
AU - Kao, Jen Chieh
AU - Meng, Chin-Chun
AU - Lo, Tai Lin
AU - Huang, Guo Wei
N1 - Publisher Copyright:
© IEEE.
PY - 2016/2/17
Y1 - 2016/2/17
N2 - A V-band dual-conversion downconverter using 0.35μm SiGe BiCMOS process is demonstrated in this paper. This downconverter contains three sub-circuits, a V-band Schottky-diode RF mixer with Marchand balun, a 15-GHz lownoise IF buffer amplifier, and an IF Gilbert mixer. The Schottky diode has high cutoff frequency because of the n+ buried layer in the SiGe BiCMOS process. Thus, a fundamental ring-mixer is employed as the RF mixer. A Marchand balun has a broadband feature, and the feature has been used to achieve converter for high frequency circuit applications. In addition to this, a lownoise buffer amplifier is used to provide enough gain performance. By combining these advantages, a dual-conversion downconverter is successfully achieved. The downconverter has about 6 dB conversion loss, 18 GHz RF bandwidth, 800 MHz IF bandwidth and about -6 dBm IP1dB when LO1 power is 5 dBm and LO2 power is 8 dBm.
AB - A V-band dual-conversion downconverter using 0.35μm SiGe BiCMOS process is demonstrated in this paper. This downconverter contains three sub-circuits, a V-band Schottky-diode RF mixer with Marchand balun, a 15-GHz lownoise IF buffer amplifier, and an IF Gilbert mixer. The Schottky diode has high cutoff frequency because of the n+ buried layer in the SiGe BiCMOS process. Thus, a fundamental ring-mixer is employed as the RF mixer. A Marchand balun has a broadband feature, and the feature has been used to achieve converter for high frequency circuit applications. In addition to this, a lownoise buffer amplifier is used to provide enough gain performance. By combining these advantages, a dual-conversion downconverter is successfully achieved. The downconverter has about 6 dB conversion loss, 18 GHz RF bandwidth, 800 MHz IF bandwidth and about -6 dBm IP1dB when LO1 power is 5 dBm and LO2 power is 8 dBm.
KW - Dual-conversion downconverter
KW - Marchand balun
KW - Schottky diode mixer
KW - Sige BiCMOS
UR - http://www.scopus.com/inward/record.url?scp=84978086866&partnerID=8YFLogxK
U2 - 10.1109/APMC.2015.7411813
DO - 10.1109/APMC.2015.7411813
M3 - Conference contribution
AN - SCOPUS:84978086866
T3 - Asia-Pacific Microwave Conference Proceedings, APMC
BT - 2015 Asia-Pacific Microwave Conference, APMC 2015 - Proceedings
A2 - Hong, Wei
A2 - Song, Zhe
A2 - Yang, Guang-Qi
A2 - Zhu, Xiao-Wei
A2 - Meng, Fan
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Asia-Pacific Microwave Conference, APMC 2015
Y2 - 6 December 2015 through 9 December 2015
ER -