@inproceedings{934e67f39b6e40ed8d01a6ec601ef8e0,
title = "V-band dual-conversion down-converter with low-doped N-well Schottky diode in 0.18 μm CMOS process",
abstract = "In this paper, a V-band dual-conversion down-converter with a silicon-based Schottky diode using low-doped N-well for DC and RF characteristics optimization is demonstrated in standard 0.18 μm CMOS technology. A triple-balanced subharmonic Schottky diode microwave mixer and a double-balanced resistive analog mixer are employed as the first conversion mixer and the second conversion mixer, respectively. As a result, the conversion gain is about -1 dB in the range of 4564 GHz. The noise figure is about 20 dB, IP 1dB is about -5 dBm and IIP3 is about 5 dBm. The total power consumption is 92.4 mW at 2.5 V supply voltage.",
keywords = "Schottky diode, down-converter, dual-conversion, subharmonic mixer",
author = "Hsiao, {Yu Chih} and Chin-Chun Meng and Wai, {Hung Ju} and Wang, {Ta Wei} and Huang, {Guo Wei} and Mau-Chung Chang",
year = "2013",
doi = "10.1109/RFIC.2013.6569619",
language = "English",
isbn = "9781467360586",
series = "Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium",
pages = "415--418",
booktitle = "Proceedings of the 2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013",
note = "2013 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2013 ; Conference date: 02-06-2013 Through 04-06-2013",
}