UV-enhanced room-temperature ultrasensitive NO gas sensor with vertical channel nano-porous organic diodes

Govindasamy Madhaiyan, Ting Wei Tung, Hsiao-Wen Zan*, Hsin-Fei Meng, Chia Jung Lu, Arshiya Ansari, Wei Tsung Chuang, Hong-Cheu Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

In this work, we successfully proposed an organic semiconductor gas sensor on vertical channel design to exhibit an ultra-sensitive response to nitric oxide gas (10 ppb) at room temperature. The effect of ultra-violet (UV) irradiation (λ =365 nm) on sensing performance of solution processed vertical organic diode (VOD) has been investigated. After implementing a simple and low-cost UV treatment, the sensing response of PBDTTT-C-T based NO sensor is significantly enhanced from 93 % to 233 % at 1 ppm. In addition, we also introduced a new strategy to tune the selectivity of organic gas sensors by using photochromic molecule and organic semiconductor blends. With the 1 Wt% spiropyran dopant, the sensor response to ammonia can be considerably suppressed, hence the response ratio between NO and ammonia can be improved from 2.9 to 16.0, indicating an improved selectivity. The proposed ultrasensitive and selective NO gas sensor have great potential for exhaled breath detection (asthma patients) and environmental monitoring.

Original languageEnglish
Article number128392
Pages (from-to)1-9
Number of pages9
JournalSensors and Actuators, B: Chemical
Volume320
DOIs
StatePublished - 1 Oct 2020

Keywords

  • Nitric oxide gas sensor
  • Organic semiconductor
  • Photochromic molecules
  • UV treatment

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