Using tunneling junction to enhance hole-injection in organic light-emitting diodes

Chan Ching Chang; Shiao Wen Hwang; Ming Ta Hsieh; Jia Wei Ma; Chin H. Chen; Jenn-Fang Chen

Using tunneling junction to enhance hole-injection in organic light-emitting diodes

Chan Ching Chang^*, Shiao Wen Hwang, Ming Ta Hsieh, Jia Wei Ma, Chin H. Chen, Jenn-Fang Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to conference › Paper › peer-review

Abstract

We demonstrate enhanced hole-injection and lower driving voltage in vacuum-deposited organic light-emitting diodes (OLEDs) with a novel tunneling junction composed of the Mg:Alq₃/WO₃ layer. The device, ITO/Mg:Alq₃/WO₃/NPB/Alq₃/LiF/AI, achieved one of the lowest driving voltages of 5.8 V at 20mA/cm² for conventional small molecule OLEDs. We propose the laminated Mg:Alq₃/WO ₃/NPB functions as a Fowler Nordheim tunneling junction, which can improve hole-injection. It was found to also prolong device lifetime under dc driving, that is comparable to the best reported for the Alq₃ emitter.

Original language	English
Pages	687-690
Number of pages	4
State	Published - Dec 2005
Event	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 - Takamatsu, Japan Duration: 6 Dec 2005 → 9 Dec 2005

Conference

Conference	IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005
Country/Territory	Japan
City	Takamatsu
Period	6/12/05 → 9/12/05

Cite this

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title = "Using tunneling junction to enhance hole-injection in organic light-emitting diodes",

abstract = "We demonstrate enhanced hole-injection and lower driving voltage in vacuum-deposited organic light-emitting diodes (OLEDs) with a novel tunneling junction composed of the Mg:Alq3/WO3 layer. The device, ITO/Mg:Alq3/WO3/NPB/Alq3/LiF/AI, achieved one of the lowest driving voltages of 5.8 V at 20mA/cm2 for conventional small molecule OLEDs. We propose the laminated Mg:Alq3/WO 3/NPB functions as a Fowler Nordheim tunneling junction, which can improve hole-injection. It was found to also prolong device lifetime under dc driving, that is comparable to the best reported for the Alq3 emitter.",

author = "Chang, {Chan Ching} and Hwang, {Shiao Wen} and Hsieh, {Ming Ta} and Ma, {Jia Wei} and Chen, {Chin H.} and Jenn-Fang Chen",

year = "2005",

month = dec,

language = "English",

pages = "687--690",

note = "IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005 ; Conference date: 06-12-2005 Through 09-12-2005",

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TY - CONF

T1 - Using tunneling junction to enhance hole-injection in organic light-emitting diodes

AU - Chang, Chan Ching

AU - Hwang, Shiao Wen

AU - Hsieh, Ming Ta

AU - Ma, Jia Wei

AU - Chen, Chin H.

AU - Chen, Jenn-Fang

PY - 2005/12

Y1 - 2005/12

N2 - We demonstrate enhanced hole-injection and lower driving voltage in vacuum-deposited organic light-emitting diodes (OLEDs) with a novel tunneling junction composed of the Mg:Alq3/WO3 layer. The device, ITO/Mg:Alq3/WO3/NPB/Alq3/LiF/AI, achieved one of the lowest driving voltages of 5.8 V at 20mA/cm2 for conventional small molecule OLEDs. We propose the laminated Mg:Alq3/WO 3/NPB functions as a Fowler Nordheim tunneling junction, which can improve hole-injection. It was found to also prolong device lifetime under dc driving, that is comparable to the best reported for the Alq3 emitter.

AB - We demonstrate enhanced hole-injection and lower driving voltage in vacuum-deposited organic light-emitting diodes (OLEDs) with a novel tunneling junction composed of the Mg:Alq3/WO3 layer. The device, ITO/Mg:Alq3/WO3/NPB/Alq3/LiF/AI, achieved one of the lowest driving voltages of 5.8 V at 20mA/cm2 for conventional small molecule OLEDs. We propose the laminated Mg:Alq3/WO 3/NPB functions as a Fowler Nordheim tunneling junction, which can improve hole-injection. It was found to also prolong device lifetime under dc driving, that is comparable to the best reported for the Alq3 emitter.

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M3 - Paper

AN - SCOPUS:33644590898

SP - 687

EP - 690

T2 - IDW/AD'05 - 12th International Display Workshops in Conjunction with Asia Display 2005

Y2 - 6 December 2005 through 9 December 2005

ER -

Using tunneling junction to enhance hole-injection in organic light-emitting diodes

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Conference

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