@inproceedings{aa010d15f6fd49fe9d0c2cd0598b3a85,
title = "Using thermal oxidation and rapid thermal annealing on polycrystalline-SiGe for Ge nanocrystals",
abstract = "In this paper, simple techniques were proposed to fabricate germanium nanocrystal capacitors by one-step thermal oxidation and/or rapid thermal annealing on poly crystal line-SiGe (poly-SiGe) deposited with a LPCVD (low pressure chemical vapor deposition) system. This thermal oxidation method can directly result in the top-control oxide layer via the oxidation of amorphous-Si film and the formation of Ge nanocrystals from the poly-SiGe film. Otherwise, the rapid thermal annealing method can be also used to form Ge nanocrystals as comparison.",
author = "Kao, {Chyuan Haur} and Lai, {C. S.} and Tsai, {M. C.} and Lee, {C. H.} and Huang, {C. S.} and Chen, {C. R.}",
year = "2008",
doi = "10.1557/proc-1071-f03-21",
language = "English",
isbn = "9781605110417",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "55--59",
booktitle = "Materials Research Society Symposium Proceedings - Materials Science and Technology for Nonvolatile Memories",
address = "美國",
note = "Materials Science and Technology for Nonvolatile Memories ; Conference date: 24-03-2008 Through 27-03-2008",
}