Using thermal oxidation and rapid thermal annealing on polycrystalline-SiGe for Ge nanocrystals

Chyuan Haur Kao*, C. S. Lai, M. C. Tsai, C. H. Lee, C. S. Huang, C. R. Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, simple techniques were proposed to fabricate germanium nanocrystal capacitors by one-step thermal oxidation and/or rapid thermal annealing on poly crystal line-SiGe (poly-SiGe) deposited with a LPCVD (low pressure chemical vapor deposition) system. This thermal oxidation method can directly result in the top-control oxide layer via the oxidation of amorphous-Si film and the formation of Ge nanocrystals from the poly-SiGe film. Otherwise, the rapid thermal annealing method can be also used to form Ge nanocrystals as comparison.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Materials Science and Technology for Nonvolatile Memories
PublisherMaterials Research Society
Pages55-59
Number of pages5
ISBN (Print)9781605110417
DOIs
StatePublished - 2008
EventMaterials Science and Technology for Nonvolatile Memories - San Francisco, CA, United States
Duration: 24 Mar 200827 Mar 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1071
ISSN (Print)0272-9172

Conference

ConferenceMaterials Science and Technology for Nonvolatile Memories
Country/TerritoryUnited States
CitySan Francisco, CA
Period24/03/0827/03/08

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