Abstract
Electrostatic discharge damage is a serious problem on nitride-based light-emitting diodes (LEDs), due to their large lattice mismatch between III-nitride material and the sapphire substrate, which induces high-density threading dislocations. In this study, GaN/GaInN-based LEDs with various thicknesses of the low-temperature planarized p-GaN layer were fabricated. We found that when the V-shaped defects were filled by the planarized p-GaN layer, the survival rate of LEDs under human-body mode -4000 V stress increases from 23 to 93% and the survival rate under machine mode -600 V stress increases from 20 to 67%. Thus the ability to endure higher electrostatic discharge stress will be greatly improved.
Original language | English |
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Pages (from-to) | L457-L460 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 46 |
Issue number | 17-19 |
DOIs | |
State | Published - 11 May 2007 |
Keywords
- ESD
- GaN
- InGaN
- Light-emitting diode
- MOCVD
- Planarized p-GaN layer