@inproceedings{29d38ddb2bf44bd7aefab6db3d54342e,
title = "Using fluorine-ion implanted a-Si layer to reduce Ni contamination and passivate the defects in NILC poly-Si",
abstract = "The grain boundaries which included dangling bonds in Ni-metal-induced lateral crystallization (NILC) poly-Si TFT would trap Ni and NiSi2 precipitates. This phenomenon resulted in threshold voltage shifting and lower field-effect mobility. To resolve this issue, the a-Si layer with fluorine-ion implanted was used as gettering layer to reduce Ni contamination and passivate the dangling bonds in the active layer. It was found that the F-G layer could not only reduce the Ni contamination but also passivate the defects in NILC poly-Si.",
author = "Chen, {Chien Chih} and Yew-Chuhg Wu",
year = "2010",
month = dec,
day = "1",
doi = "10.1149/1.3481231",
language = "English",
isbn = "9781566778244",
series = "ECS Transactions",
number = "5",
pages = "161--164",
booktitle = "Thin Film Transistors 10, TFT 10",
edition = "5",
note = "10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting ; Conference date: 11-10-2010 Through 15-10-2010",
}