Using erase self-detrapped effect to eliminate the flash cell program/erase cycling Vth window close

J. H. Lee*, K. R. Peng, J. R. Shih, S. H. Chen, J. K. Yeh, H. D. Su, M. C. Ho, D. S. Kuo, B. K. Liew, Jack Y.C. Sun

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

The influence of the Erase Self-Detrapped Effect (ESDE) on the cell's degradation characteristics after program/erase (P/E) cycles is studied. Two new erase schemes are proposed to improve the cell's endurance characteristics: adding a channel erase cycle after the negative-gate erase (NGE) operation; and adding a channel erase cycle after the source erase (SE) operation. These two erase schemes are shown to significantly reduce the Vth window close problem.

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherIEEE
Pages24-29
Number of pages6
ISBN (Print)0780352203
StatePublished - 1999
EventProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium - San Diego, CA, USA
Duration: 23 Mar 199925 Mar 1999

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

ConferenceProceedings of the 1999 37th Annual IEEE International Reliability Physics Symposium
CitySan Diego, CA, USA
Period23/03/9925/03/99

Fingerprint

Dive into the research topics of 'Using erase self-detrapped effect to eliminate the flash cell program/erase cycling V<sub>th</sub> window close'. Together they form a unique fingerprint.

Cite this