Nickel contamination inside nickel-metal-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) is an issue to fabricate high performance thin film transistors (TFTs). A simple and effective method for gettering Ni was proposed with ~5-nm-thick chemical oxide (chem-SiO2) as the etching stop layer, and 100-nm-thick amorphous Si as the gettering layer. Ni-gettering process was annealed at 550°C in N2 ambient for only 12 h to considerably reduce Ni-metal impurity within the NILC poly-Si film.
|Title of host publication||ECS Transactions - Thin Film Transistors 9, TFT 9|
|Number of pages||3|
|State||Published - 1 Dec 2008|
|Event||Thin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States|
Duration: 13 Oct 2008 → 16 Oct 2008
|Conference||Thin Film Transistors 9, TFT 9 - 214th ECS Meeting|
|Period||13/10/08 → 16/10/08|