Using chemical oxide layer to getter nickel inside nickel-metal-induced lateral crystallization polycrystalline silicon

Bau Ming Wang; Tzu Ming Yang; Ching Chieh Tseng; Yew-Chuhg Wu

doi:10.1149/1.2980550

Using chemical oxide layer to getter nickel inside nickel-metal-induced lateral crystallization polycrystalline silicon

Bau Ming Wang^*, Tzu Ming Yang, Ching Chieh Tseng, Yew-Chuhg Wu

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Nickel contamination inside nickel-metal-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) is an issue to fabricate high performance thin film transistors (TFTs). A simple and effective method for gettering Ni was proposed with ~5-nm-thick chemical oxide (chem-SiO₂) as the etching stop layer, and 100-nm-thick amorphous Si as the gettering layer. Ni-gettering process was annealed at 550°C in N₂ ambient for only 12 h to considerably reduce Ni-metal impurity within the NILC poly-Si film.

Original language	English
Title of host publication	ECS Transactions - Thin Film Transistors 9, TFT 9
Pages	193-195
Number of pages	3
Edition	9
DOIs	https://doi.org/10.1149/1.2980550
State	Published - 1 Dec 2008
Event	Thin Film Transistors 9, TFT 9 - 214th ECS Meeting - Honolulu, HI, United States Duration: 13 Oct 2008 → 16 Oct 2008

Publication series

Name	ECS Transactions
Number	9
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Thin Film Transistors 9, TFT 9 - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	13/10/08 → 16/10/08

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10.1149/1.2980550

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title = "Using chemical oxide layer to getter nickel inside nickel-metal-induced lateral crystallization polycrystalline silicon",

abstract = "Nickel contamination inside nickel-metal-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) is an issue to fabricate high performance thin film transistors (TFTs). A simple and effective method for gettering Ni was proposed with ~5-nm-thick chemical oxide (chem-SiO2) as the etching stop layer, and 100-nm-thick amorphous Si as the gettering layer. Ni-gettering process was annealed at 550°C in N2 ambient for only 12 h to considerably reduce Ni-metal impurity within the NILC poly-Si film.",

author = "Wang, {Bau Ming} and Yang, {Tzu Ming} and Tseng, {Ching Chieh} and Yew-Chuhg Wu",

year = "2008",

month = dec,

day = "1",

doi = "10.1149/1.2980550",

language = "English",

isbn = "9781566776554",

series = "ECS Transactions",

number = "9",

pages = "193--195",

booktitle = "ECS Transactions - Thin Film Transistors 9, TFT 9",

edition = "9",

note = "Thin Film Transistors 9, TFT 9 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 16-10-2008",

}

Wang, BM, Yang, TM, Tseng, CC & Wu, Y-C 2008, Using chemical oxide layer to getter nickel inside nickel-metal-induced lateral crystallization polycrystalline silicon. in ECS Transactions - Thin Film Transistors 9, TFT 9. 9 edn, ECS Transactions, no. 9, vol. 16, pp. 193-195, Thin Film Transistors 9, TFT 9 - 214th ECS Meeting, Honolulu, HI, United States, 13/10/08. https://doi.org/10.1149/1.2980550

Using chemical oxide layer to getter nickel inside nickel-metal-induced lateral crystallization polycrystalline silicon. / Wang, Bau Ming; Yang, Tzu Ming; Tseng, Ching Chieh et al.
ECS Transactions - Thin Film Transistors 9, TFT 9. 9. ed. 2008. p. 193-195 (ECS Transactions; Vol. 16, No. 9).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Using chemical oxide layer to getter nickel inside nickel-metal-induced lateral crystallization polycrystalline silicon

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AU - Tseng, Ching Chieh

AU - Wu, Yew-Chuhg

PY - 2008/12/1

Y1 - 2008/12/1

N2 - Nickel contamination inside nickel-metal-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) is an issue to fabricate high performance thin film transistors (TFTs). A simple and effective method for gettering Ni was proposed with ~5-nm-thick chemical oxide (chem-SiO2) as the etching stop layer, and 100-nm-thick amorphous Si as the gettering layer. Ni-gettering process was annealed at 550°C in N2 ambient for only 12 h to considerably reduce Ni-metal impurity within the NILC poly-Si film.

AB - Nickel contamination inside nickel-metal-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) is an issue to fabricate high performance thin film transistors (TFTs). A simple and effective method for gettering Ni was proposed with ~5-nm-thick chemical oxide (chem-SiO2) as the etching stop layer, and 100-nm-thick amorphous Si as the gettering layer. Ni-gettering process was annealed at 550°C in N2 ambient for only 12 h to considerably reduce Ni-metal impurity within the NILC poly-Si film.

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U2 - 10.1149/1.2980550

DO - 10.1149/1.2980550

M3 - Conference contribution

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BT - ECS Transactions - Thin Film Transistors 9, TFT 9

T2 - Thin Film Transistors 9, TFT 9 - 214th ECS Meeting

Y2 - 13 October 2008 through 16 October 2008

ER -

Using chemical oxide layer to getter nickel inside nickel-metal-induced lateral crystallization polycrystalline silicon

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