Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit

K. Y. Hsiang, F. S. Chang, Z. F. Lou, A. Aich, A. Senapati, J. Y. Lee, Z. X. Li, J. H. Chen, C. H. Liu, C. W. Liu, S. Maikap, P. Su, T. H. Hou, M. H. Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Asymmetric field cycling recovery (AFCR) with alternating opposite low E -field cycling is proposed to restore a fatigued ferroelectric (FE) capacitor and is experimentally demonstrated for up to 1012 switching cycles, thereby extending the endurance of FeRAM. Positive and negative asymmetric minor loops (AmLs) with AFCR exhibit nondegradation and complete restoration of Δ 2P r toward unlimited endurance operation. Furthermore, an FE random access memory (FeRAM) array circuit with an inverting amplifier is designed to simultaneously execute Write/Read and Recovery procedures via the AFCR scheme.

Original languageEnglish
Pages (from-to)2708-2713
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume71
Issue number4
DOIs
StatePublished - 1 Apr 2024

Keywords

  • Endurance
  • ferroelectric (FE)
  • recovery

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