Unipolar parity of ferroelectric-antiferroelectric characterized by junction current in crystalline phase Hf1−xZrxO2 diodes

Kuo Yu Hsiang, Chun Yu Liao, Jer Fu Wang, Zhao Feng Lou, Chen Ying Lin, Shih Hung Chiang, Chee Wee Liu, Tuo Hung Hou, Min Hung Lee*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally characterizes and demonstrates the FE and antiferroelectric (AFE) material properties, which are modulated from doped Zr incorporated in the HfO2-system, with a diode-junction current for memory operations. Unipolar operations on one of the two hysteretic polarization branch loops of the mixed FE and AFE material give a low program voltage of 3 V with an ON/OFF ratio >100. This also benefits the switching endurance, which reaches >109 cycles. A model based on the polarization switching and tunneling mechanisms is revealed in the (A)FE diode to explain the bipolar and unipolar sweeps. In addition, the proposed FE-AFE diode with Hf1−xZrxO2 has a superior cycling endurance and lower stimulation voltage compared to perovskite FE-diodes due to its scaling capability for resistive FE memory devices.

Original languageEnglish
Article number2685
JournalNanomaterials
Volume11
Issue number10
DOIs
StatePublished - Oct 2021

Keywords

  • Antiferroelectric
  • Ferroelectric
  • HfZrO

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