Keyphrases
Ferroelectric Memory
100%
Oxide-based
100%
Hafnium Oxide
100%
CexZr1-xO2
100%
Crystal Formation
100%
Thermal Engineering
100%
Variability Reduction
100%
Rapid Thermal Annealing
80%
Annealing Duration
40%
Annealing
20%
Phase Transformation
20%
Surface Roughness
20%
Capacitance
20%
Electrical Properties
20%
Atmospheric Pressure
20%
Leakage Current Density
20%
Thermal Budget
20%
Ferroelectric Domains
20%
Physics-based
20%
Leakage Reduction
20%
Doped Hafnium Oxide
20%
Device Application
20%
Ferroelectric Phase
20%
Random Variation
20%
Motivation
20%
Ferroelectric Devices
20%
Extremely Low Temperature
20%
Ferroelectric Capacitor
20%
N2 Atmosphere
20%
Ferroelectric Films
20%
Doped Zirconia
20%
Coercive Voltage
20%
Deterministic Switching
20%
Nucleation Theory
20%
Domain Distribution
20%
Germination
20%
Dielectric Phase
20%
Variation Control
20%
Device-to-device Variation
20%
Steep Slope Devices
20%
Johnson-Mehl-Avrami-Kolmogorov
20%
Kolmogorov Theory
20%
Material Science
Ferroelectric Material
100%
Oxide Compound
100%
Hafnium
100%
Crystal Growth
100%
Annealing
66%
Density
16%
Film
16%
Nucleation
16%
Surface Roughness
16%
Capacitance
16%
Capacitor
16%
Zirconium
16%
Ferroelectricity
16%
Ferroelectric Film
16%
Dielectric Material
16%
Engineering
Rapid Thermal Annealing
100%
Crystal Growth
100%
Thermal Engineering
100%
Low-Temperature
25%
Dielectrics
25%
Random Variation
25%
Sufficient Time
25%
Million Cycle
25%
Pivotal Point
25%
Atmospheric Pressure
25%