Undoped β‑Ga2O3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Chan Hung Lu; Fu Gow Tarntair; Yu Cheng Kao; Niall Tumilty; Ray Hua Horng

doi:10.1021/ACSAELM.3C01558

Undoped β‑Ga₂O₃ Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

Chan Hung Lu, Fu Gow Tarntair, Yu Cheng Kao, Niall Tumilty, Ray Hua Horng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

β-Ga₂O₃ metal-oxide-semiconductor field-effect transistors (MOSFETs) with various unintentionally doped (UID) layer thicknesses (50, 100, and 200 nm) of (2̅01) beneath the Si tetraethoxysilane (TEOS)-doped film were grown by metal− organic chemical vapor deposition on a (0001) sapphire substrate. The UID layer thickness causes the MOSFET turn-on current to increase from 1.7 to 700 μA/mm, R_ON to decrease from 1.13 MΩ·mm to 3.8 kΩ·mm, and breakdown voltage to decrease from 910 to 240 V. Through X-ray photoelectron spectroscopy (XPS), we ascribe this increased turn-on current and reduced breakdown voltage to oxygen vacancies.

Original language	English
Pages (from-to)	568-575
Number of pages	8
Journal	ACS Applied Electronic Materials
Volume	6
Issue number	1
DOIs	https://doi.org/10.1021/ACSAELM.3C01558
State	Published - 23 Jan 2024

Keywords

X-ray photoelectron spectroscopy (XPS)
metal-oxide-semiconductor field-effect transistors (MOSFETs)
metal−organic chemical vapor deposition
tetraethoxysilane (TEOS)
unintentionally doped (UID) layers
β-GaO

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10.1021/ACSAELM.3C01558

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title = "Undoped β‑Ga2O3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate",

abstract = "β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with various unintentionally doped (UID) layer thicknesses (50, 100, and 200 nm) of (2̅01) beneath the Si tetraethoxysilane (TEOS)-doped film were grown by metal− organic chemical vapor deposition on a (0001) sapphire substrate. The UID layer thickness causes the MOSFET turn-on current to increase from 1.7 to 700 μA/mm, RON to decrease from 1.13 MΩ·mm to 3.8 kΩ·mm, and breakdown voltage to decrease from 910 to 240 V. Through X-ray photoelectron spectroscopy (XPS), we ascribe this increased turn-on current and reduced breakdown voltage to oxygen vacancies.",

keywords = "X-ray photoelectron spectroscopy (XPS), metal-oxide-semiconductor field-effect transistors (MOSFETs), metal−organic chemical vapor deposition, tetraethoxysilane (TEOS), unintentionally doped (UID) layers, β-GaO",

author = "Lu, {Chan Hung} and Tarntair, {Fu Gow} and Kao, {Yu Cheng} and Niall Tumilty and Horng, {Ray Hua}",

note = "Publisher Copyright: {\textcopyright} 2024 American Chemical Society.",

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doi = "10.1021/ACSAELM.3C01558",

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T1 - Undoped β‑Ga2O3 Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

AU - Lu, Chan Hung

AU - Tarntair, Fu Gow

AU - Kao, Yu Cheng

AU - Tumilty, Niall

AU - Horng, Ray Hua

PY - 2024/1/23

Y1 - 2024/1/23

N2 - β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with various unintentionally doped (UID) layer thicknesses (50, 100, and 200 nm) of (2̅01) beneath the Si tetraethoxysilane (TEOS)-doped film were grown by metal− organic chemical vapor deposition on a (0001) sapphire substrate. The UID layer thickness causes the MOSFET turn-on current to increase from 1.7 to 700 μA/mm, RON to decrease from 1.13 MΩ·mm to 3.8 kΩ·mm, and breakdown voltage to decrease from 910 to 240 V. Through X-ray photoelectron spectroscopy (XPS), we ascribe this increased turn-on current and reduced breakdown voltage to oxygen vacancies.

AB - β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) with various unintentionally doped (UID) layer thicknesses (50, 100, and 200 nm) of (2̅01) beneath the Si tetraethoxysilane (TEOS)-doped film were grown by metal− organic chemical vapor deposition on a (0001) sapphire substrate. The UID layer thickness causes the MOSFET turn-on current to increase from 1.7 to 700 μA/mm, RON to decrease from 1.13 MΩ·mm to 3.8 kΩ·mm, and breakdown voltage to decrease from 910 to 240 V. Through X-ray photoelectron spectroscopy (XPS), we ascribe this increased turn-on current and reduced breakdown voltage to oxygen vacancies.

KW - X-ray photoelectron spectroscopy (XPS)

KW - metal-oxide-semiconductor field-effect transistors (MOSFETs)

KW - metal−organic chemical vapor deposition

KW - tetraethoxysilane (TEOS)

KW - unintentionally doped (UID) layers

KW - β-GaO

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DO - 10.1021/ACSAELM.3C01558

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JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 1

ER -

Undoped β‑Ga₂O₃ Layer Thickness Effect on the Performance of MOSFETs Grown on a Sapphire Substrate

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Keywords

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