Abstract
This study investigates a device's ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf1-xZrxO2 (HZO). A conventional field-effect transistor (FET) with pure hafnium (HfO2) is used as a control measure and the impact of an internal metal gate (IMG) is also discussed. The study was conducted by using a sub-5-nm HZO and seed layer to fabricate a gate-all-around (GAA) nanowire (NW); a FeFET with a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure; and a double layer (DL) of the channel. The channel size used in the experiment was approximately 9.6times16 nm2 and the total thickness of the gate stack was 9.2 nm. This thickness is 50.5% less than our previous experiment. The FeFET exhibits a considerably high {I}-{on} - {I}-{off} ratio exceeding 107. The IMG serves as a potential equalizer and the ferroelectric material is arranged in a more symmetrical electric field. This results in a lower subthreshold (sub- {V}-{TH} ) swing ( S.S.-{min}= 49.3mV/decade) with a wide range ( 10 {3} ) of drain currentcompared to that without an IMG. The findings indicate that a high-performance GAA FET can be achieved by combining a DL channel, GAA NW, ferroelectric material, and an IMG.
Original language | English |
---|---|
Article number | 9344700 |
Pages (from-to) | 236-241 |
Number of pages | 6 |
Journal | IEEE Journal of the Electron Devices Society |
Volume | 9 |
DOIs | |
State | Published - Feb 2021 |
Keywords
- FeFET
- HZO
- IMG
- MFMIS
- Poly-Si
- Stacked channel
- gate-all-around
- nanowire
- seed layer