Ultrathin Si capping layer suppresses charge trapping in HfO xNy/Ge metal-insulator-semiconductor capacitors

Chao Ching Cheng; Chao-Hsin Chien; Guang Li Luo; Chun Hui Yang; Mei Ling Kuo; Je Hung Lin; Chun Yen Chang

doi:10.1063/1.2430629

Ultrathin Si capping layer suppresses charge trapping in HfO _xN_y/Ge metal-insulator-semiconductor capacitors

Chao Ching Cheng^*, Chao-Hsin Chien, Guang Li Luo, Chun Hui Yang, Mei Ling Kuo, Je Hung Lin, Chun Yen Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this study the authors investigated the Ge outdiffusion characteristics of Hf Ox Ny Ge metal-insulator-semiconductor capacitors to determine their charge trapping behavior. Capping the Ge substrate with an ultrathin Si layer inhibits the incorporation of Ge into the high- k bulk dielectric in the form of Ge Ox, thereby diminishing the resultant oxide charge trapping. The thermal stability of the entire capacitor structure was also improved after performing an additional Si passivation process.

Original language	English
Article number	012905
Journal	Applied Physics Letters
Volume	90
Issue number	1
DOIs	https://doi.org/10.1063/1.2430629
State	Published - 15 Jan 2007

Access to Document

10.1063/1.2430629

Cite this

@article{474ae22af38a451f9b4211d2dd9c1bf9,

title = "Ultrathin Si capping layer suppresses charge trapping in HfO xNy/Ge metal-insulator-semiconductor capacitors",

abstract = "In this study the authors investigated the Ge outdiffusion characteristics of Hf Ox Ny Ge metal-insulator-semiconductor capacitors to determine their charge trapping behavior. Capping the Ge substrate with an ultrathin Si layer inhibits the incorporation of Ge into the high- k bulk dielectric in the form of Ge Ox, thereby diminishing the resultant oxide charge trapping. The thermal stability of the entire capacitor structure was also improved after performing an additional Si passivation process.",

author = "Cheng, {Chao Ching} and Chao-Hsin Chien and Luo, {Guang Li} and Yang, {Chun Hui} and Kuo, {Mei Ling} and Lin, {Je Hung} and Chang, {Chun Yen}",

year = "2007",

month = jan,

day = "15",

doi = "10.1063/1.2430629",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Ultrathin Si capping layer suppresses charge trapping in HfO xNy/Ge metal-insulator-semiconductor capacitors

AU - Cheng, Chao Ching

AU - Chien, Chao-Hsin

AU - Luo, Guang Li

AU - Yang, Chun Hui

AU - Kuo, Mei Ling

AU - Lin, Je Hung

AU - Chang, Chun Yen

PY - 2007/1/15

Y1 - 2007/1/15

N2 - In this study the authors investigated the Ge outdiffusion characteristics of Hf Ox Ny Ge metal-insulator-semiconductor capacitors to determine their charge trapping behavior. Capping the Ge substrate with an ultrathin Si layer inhibits the incorporation of Ge into the high- k bulk dielectric in the form of Ge Ox, thereby diminishing the resultant oxide charge trapping. The thermal stability of the entire capacitor structure was also improved after performing an additional Si passivation process.

AB - In this study the authors investigated the Ge outdiffusion characteristics of Hf Ox Ny Ge metal-insulator-semiconductor capacitors to determine their charge trapping behavior. Capping the Ge substrate with an ultrathin Si layer inhibits the incorporation of Ge into the high- k bulk dielectric in the form of Ge Ox, thereby diminishing the resultant oxide charge trapping. The thermal stability of the entire capacitor structure was also improved after performing an additional Si passivation process.

UR - http://www.scopus.com/inward/record.url?scp=33846050504&partnerID=8YFLogxK

U2 - 10.1063/1.2430629

DO - 10.1063/1.2430629

M3 - Article

AN - SCOPUS:33846050504

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012905

ER -

Ultrathin Si capping layer suppresses charge trapping in HfO _xN_y/Ge metal-insulator-semiconductor capacitors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this