Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic light-emitting diodes

Ta Ya Chu; Szu Yi Chen; Jenn-Fang Chen; Chin H. Chen

doi:10.1143/JJAP.45.4948

Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic light-emitting diodes

Ta Ya Chu^*, Szu Yi Chen, Jenn-Fang Chen, Chin H. Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

We have fabricated a highly efficient inverted bottom-emission organic light-emitting diode (IBOLED) based on an indiumtin oxide (ITO) bottom cathode deposited with an ultrathin 1 nm layer of Mg to promote electron injection. The threshold voltage of this IBOLED with a structure of ITO/Mg/Alq ₃/NPB/WO₃/Al was 4.2V and an efficiencies of 4.66 cd/A and 1.51 Im/W were achieved at an operational voltage of 8.9V and a brightness of 940cd/m². In comparison with an ITO/Alq₃ bottom cathode composition, a reduction in drive voltage from 13.8 to 7.8V in voltage was obtained at 1 mA/cm². A charge-transfer dipole model is proposed to rationalize the enhanced electron injection.

Original language	English
Pages (from-to)	4948-4950
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	6 A
DOIs	https://doi.org/10.1143/JJAP.45.4948
State	Published - 2006

Keywords

Electron injection
Indium tin oxide (ITO)
Inverted organic light emitting device (IOLED)

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10.1143/JJAP.45.4948

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@article{d46200e2a574442c8805701a2af99977,

title = "Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic light-emitting diodes",

abstract = "We have fabricated a highly efficient inverted bottom-emission organic light-emitting diode (IBOLED) based on an indiumtin oxide (ITO) bottom cathode deposited with an ultrathin 1 nm layer of Mg to promote electron injection. The threshold voltage of this IBOLED with a structure of ITO/Mg/Alq 3/NPB/WO3/Al was 4.2V and an efficiencies of 4.66 cd/A and 1.51 Im/W were achieved at an operational voltage of 8.9V and a brightness of 940cd/m2. In comparison with an ITO/Alq3 bottom cathode composition, a reduction in drive voltage from 13.8 to 7.8V in voltage was obtained at 1 mA/cm2. A charge-transfer dipole model is proposed to rationalize the enhanced electron injection.",

keywords = "Electron injection, Indium tin oxide (ITO), Inverted organic light emitting device (IOLED)",

author = "Chu, {Ta Ya} and Chen, {Szu Yi} and Jenn-Fang Chen and Chen, {Chin H.}",

year = "2006",

doi = "10.1143/JJAP.45.4948",

language = "English",

volume = "45",

pages = "4948--4950",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 A",

}

Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic light-emitting diodes. / Chu, Ta Ya; Chen, Szu Yi; Chen, Jenn-Fang et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 6 A, 2006, p. 4948-4950.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic light-emitting diodes

AU - Chu, Ta Ya

AU - Chen, Szu Yi

AU - Chen, Jenn-Fang

AU - Chen, Chin H.

PY - 2006

Y1 - 2006

N2 - We have fabricated a highly efficient inverted bottom-emission organic light-emitting diode (IBOLED) based on an indiumtin oxide (ITO) bottom cathode deposited with an ultrathin 1 nm layer of Mg to promote electron injection. The threshold voltage of this IBOLED with a structure of ITO/Mg/Alq 3/NPB/WO3/Al was 4.2V and an efficiencies of 4.66 cd/A and 1.51 Im/W were achieved at an operational voltage of 8.9V and a brightness of 940cd/m2. In comparison with an ITO/Alq3 bottom cathode composition, a reduction in drive voltage from 13.8 to 7.8V in voltage was obtained at 1 mA/cm2. A charge-transfer dipole model is proposed to rationalize the enhanced electron injection.

AB - We have fabricated a highly efficient inverted bottom-emission organic light-emitting diode (IBOLED) based on an indiumtin oxide (ITO) bottom cathode deposited with an ultrathin 1 nm layer of Mg to promote electron injection. The threshold voltage of this IBOLED with a structure of ITO/Mg/Alq 3/NPB/WO3/Al was 4.2V and an efficiencies of 4.66 cd/A and 1.51 Im/W were achieved at an operational voltage of 8.9V and a brightness of 940cd/m2. In comparison with an ITO/Alq3 bottom cathode composition, a reduction in drive voltage from 13.8 to 7.8V in voltage was obtained at 1 mA/cm2. A charge-transfer dipole model is proposed to rationalize the enhanced electron injection.

KW - Electron injection

KW - Indium tin oxide (ITO)

KW - Inverted organic light emitting device (IOLED)

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U2 - 10.1143/JJAP.45.4948

DO - 10.1143/JJAP.45.4948

M3 - Article

AN - SCOPUS:33745286472

SN - 0021-4922

VL - 45

SP - 4948

EP - 4950

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 6 A

ER -

Ultrathin electron injection layer on indium-tin oxide bottom cathode for highly efficient inverted organic light-emitting diodes

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Keywords

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