Ultralow Voltage Manipulation of Ferromagnetism

Bhagwati Prasad*, Yen-Lin Huang, Rajesh V. Chopdekar, Zuhuang Chen, James Steffes, Sujit Das, Qian Li, Mengmeng Yang, Chia Ching Lin, Tanay Gosavi, Dmitri E. Nikonov, Zi Qiang Qiu, Lane W. Martin, Bryan D. Huey, Ian Young, Jorge Íñiguez, Sasikanth Manipatruni, Ramamoorthy Ramesh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm−2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm−2. This work provides a template to achieve attojoule-class nonvolatile memories.

Original languageEnglish
Article number2001943
Pages (from-to)1-6
Number of pages6
JournalAdvanced Materials
Volume32
Issue number28
DOIs
StatePublished - 1 Jul 2020

Keywords

  • magnetoelectrics
  • multiferroics
  • nonvolatile memories
  • spintronics
  • ultralow-power spintronics

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