Ultralow Voltage Manipulation of Ferromagnetism

Bhagwati Prasad; Yen-Lin Huang; Rajesh V. Chopdekar; Zuhuang Chen; James Steffes; Sujit Das; Qian Li; Mengmeng Yang; Chia Ching Lin; Tanay Gosavi; Dmitri E. Nikonov; Zi Qiang Qiu; Lane W. Martin; Bryan D. Huey; Ian Young; Jorge Íñiguez; Sasikanth Manipatruni; Ramamoorthy Ramesh

doi:10.1002/adma.202001943

Ultralow Voltage Manipulation of Ferromagnetism

Bhagwati Prasad^*, Yen-Lin Huang, Rajesh V. Chopdekar, Zuhuang Chen, James Steffes, Sujit Das, Qian Li, Mengmeng Yang, Chia Ching Lin, Tanay Gosavi, Dmitri E. Nikonov, Zi Qiang Qiu, Lane W. Martin, Bryan D. Huey, Ian Young, Jorge Íñiguez, Sasikanth Manipatruni, Ramamoorthy Ramesh

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm⁻² switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO₃ to scale the switching energy density to ≈10 µJ cm⁻². This work provides a template to achieve attojoule-class nonvolatile memories.

Original language	English
Article number	2001943
Pages (from-to)	1-6
Number of pages	6
Journal	Advanced Materials
Volume	32
Issue number	28
DOIs	https://doi.org/10.1002/adma.202001943
State	Published - 1 Jul 2020

Keywords

magnetoelectrics
multiferroics
nonvolatile memories
spintronics
ultralow-power spintronics

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Prasad, B., Huang, Y.-L., Chopdekar, R. V., Chen, Z., Steffes, J., Das, S., Li, Q., Yang, M., Lin, C. C., Gosavi, T., Nikonov, D. E., Qiu, Z. Q., Martin, L. W., Huey, B. D., Young, I., Íñiguez, J., Manipatruni, S., & Ramesh, R. (2020). Ultralow Voltage Manipulation of Ferromagnetism. Advanced Materials, 32(28), 1-6. Article 2001943. https://doi.org/10.1002/adma.202001943

@article{eee3642797a24e5695df5871fc1f9889,

title = "Ultralow Voltage Manipulation of Ferromagnetism",

abstract = "Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm−2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm−2. This work provides a template to achieve attojoule-class nonvolatile memories.",

keywords = "magnetoelectrics, multiferroics, nonvolatile memories, spintronics, ultralow-power spintronics",

author = "Bhagwati Prasad and Yen-Lin Huang and Chopdekar, {Rajesh V.} and Zuhuang Chen and James Steffes and Sujit Das and Qian Li and Mengmeng Yang and Lin, {Chia Ching} and Tanay Gosavi and Nikonov, {Dmitri E.} and Qiu, {Zi Qiang} and Martin, {Lane W.} and Huey, {Bryan D.} and Ian Young and Jorge {\'I}{\~n}iguez and Sasikanth Manipatruni and Ramamoorthy Ramesh",

note = "Publisher Copyright: {\textcopyright} 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2020",

month = jul,

day = "1",

doi = "10.1002/adma.202001943",

language = "English",

volume = "32",

pages = "1--6",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "28",

}

TY - JOUR

T1 - Ultralow Voltage Manipulation of Ferromagnetism

AU - Prasad, Bhagwati

AU - Huang, Yen-Lin

AU - Chopdekar, Rajesh V.

AU - Chen, Zuhuang

AU - Steffes, James

AU - Das, Sujit

AU - Li, Qian

AU - Yang, Mengmeng

AU - Lin, Chia Ching

AU - Gosavi, Tanay

AU - Nikonov, Dmitri E.

AU - Qiu, Zi Qiang

AU - Martin, Lane W.

AU - Huey, Bryan D.

AU - Young, Ian

AU - Íñiguez, Jorge

AU - Manipatruni, Sasikanth

AU - Ramesh, Ramamoorthy

PY - 2020/7/1

Y1 - 2020/7/1

N2 - Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm−2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm−2. This work provides a template to achieve attojoule-class nonvolatile memories.

AB - Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1–10 µJ cm−2 switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to ≈10 µJ cm−2. This work provides a template to achieve attojoule-class nonvolatile memories.

KW - magnetoelectrics

KW - multiferroics

KW - nonvolatile memories

KW - spintronics

KW - ultralow-power spintronics

UR - http://www.scopus.com/inward/record.url?scp=85085512641&partnerID=8YFLogxK

U2 - 10.1002/adma.202001943

DO - 10.1002/adma.202001943

M3 - Article

C2 - 32468701

AN - SCOPUS:85085512641

SN - 0935-9648

VL - 32

SP - 1

EP - 6

JO - Advanced Materials

JF - Advanced Materials

IS - 28

M1 - 2001943

ER -

Ultralow Voltage Manipulation of Ferromagnetism

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