Ultralow switching energy Ni/GeOx/HfON/TaN RRAM

C. H. Cheng; Albert Chin; F. S. Yeh

doi:10.1109/LED.2010.2095820

Ultralow switching energy Ni/GeO_x/HfON/TaN RRAM

C. H. Cheng, Albert Chin, F. S. Yeh

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Using stacked covalent-bond-dielectric GeO_x on metaloxynitride HfON, the NiGeO_x/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10^-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.

Original language	English
Article number	5680574
Pages (from-to)	366-368
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/LED.2010.2095820
State	Published - 1 Mar 2011

Keywords

GeO
HfON
hopping conduction
resistive random access memory (RRAM)

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10.1109/LED.2010.2095820

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title = "Ultralow switching energy Ni/GeOx/HfON/TaN RRAM",

abstract = "Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.",

keywords = "GeO, HfON, hopping conduction, resistive random access memory (RRAM)",

author = "Cheng, {C. H.} and Albert Chin and Yeh, {F. S.}",

year = "2011",

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doi = "10.1109/LED.2010.2095820",

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AU - Cheng, C. H.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2011/3/1

Y1 - 2011/3/1

N2 - Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.

AB - Using stacked covalent-bond-dielectric GeOx on metaloxynitride HfON, the NiGeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at 1.8 V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 10-6 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metaloxide RRAM.

KW - GeO

KW - HfON

KW - hopping conduction

KW - resistive random access memory (RRAM)

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DO - 10.1109/LED.2010.2095820

M3 - Article

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 5680574

ER -

Ultralow switching energy Ni/GeO_x/HfON/TaN RRAM

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