Ultralow-power Ni/GeO/STO/TaN resistive switching memory

C. H. Cheng; Albert Chin; F. S. Yeh

doi:10.1109/LED.2010.2055828

Ultralow-power Ni/GeO/STO/TaN resistive switching memory

C. H. Cheng, Albert Chin, F. S. Yeh

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Using novel stacked covalent-bond-dielectric GeO_x (GeO) on metal-oxide SrTiO₃ to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 10⁶ memory window for 10⁵-s retention at 85 °C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.

Original language	English
Article number	5545348
Pages (from-to)	1020-1022
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1109/LED.2010.2055828
State	Published - 1 Sep 2010

Keywords

GeO
resistive random accessmemory (RRAM)
SrTiO (STO)

Access to Document

10.1109/LED.2010.2055828

Cite this

@article{8836c68b998e475c8ad6560593fff901,

title = "Ultralow-power Ni/GeO/STO/TaN resistive switching memory",

abstract = "Using novel stacked covalent-bond-dielectric GeOx (GeO) on metal-oxide SrTiO3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 106 memory window for 105-s retention at 85 °C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.",

keywords = "GeO, resistive random accessmemory (RRAM), SrTiO (STO)",

author = "Cheng, {C. H.} and Albert Chin and Yeh, {F. S.}",

year = "2010",

month = sep,

day = "1",

doi = "10.1109/LED.2010.2055828",

language = "English",

volume = "31",

pages = "1020--1022",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Ultralow-power Ni/GeO/STO/TaN resistive switching memory

AU - Cheng, C. H.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - Using novel stacked covalent-bond-dielectric GeOx (GeO) on metal-oxide SrTiO3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 106 memory window for 105-s retention at 85 °C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.

AB - Using novel stacked covalent-bond-dielectric GeOx (GeO) on metal-oxide SrTiO3 to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 μW (3.5 μA at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 106 memory window for 105-s retention at 85 °C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.

KW - GeO

KW - resistive random accessmemory (RRAM)

KW - SrTiO (STO)

UR - http://www.scopus.com/inward/record.url?scp=77956169769&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2055828

DO - 10.1109/LED.2010.2055828

M3 - Article

AN - SCOPUS:77956169769

SN - 0741-3106

VL - 31

SP - 1020

EP - 1022

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 5545348

ER -

Ultralow-power Ni/GeO/STO/TaN resistive switching memory

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this