Time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al 0.32 Ga 0.68 As/GaAs quantum wells are presented. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier-carrier scattering as the injected carrier densities increased toward 10 11 cm -2 .
|Number of pages||4|
|Journal||Physica B: Condensed Matter|
|State||Published - 1 Jan 1999|
|Event||Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn|
Duration: 19 Jul 1999 → 23 Jul 1999