Ultrafast carrier-carrier scattering in Al x Ga 1-x As/GaAs quantum wells

Kien-Wen Sun; T. S. Song; C. K. Sun; J. C. Wang; S. Y. Wang; C. P. Lee

doi:10.1016/S0921-4526(99)00386-5

Ultrafast carrier-carrier scattering in Al _x Ga _1-x As/GaAs quantum wells

Kien-Wen Sun^*, T. S. Song, C. K. Sun, J. C. Wang, S. Y. Wang, C. P. Lee

^*Corresponding author for this work

Department of Applied Chemistry

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

Time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al_0.32Ga_0.68As/GaAs quantum wells are presented. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier-carrier scattering as the injected carrier densities increased toward 10¹¹ cm^-2.

Original language	English
Pages (from-to)	387-390
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00386-5
State	Published - 1999
Event	Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: 19 Jul 1999 → 23 Jul 1999

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title = "Ultrafast carrier-carrier scattering in Al x Ga 1-x As/GaAs quantum wells",

abstract = "Time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al0.32Ga0.68As/GaAs quantum wells are presented. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier-carrier scattering as the injected carrier densities increased toward 1011 cm-2.",

author = "Kien-Wen Sun and Song, {T. S.} and Sun, {C. K.} and Wang, {J. C.} and Wang, {S. Y.} and Lee, {C. P.}",

year = "1999",

doi = "10.1016/S0921-4526(99)00386-5",

language = "English",

volume = "272",

pages = "387--390",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

note = "Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) ; Conference date: 19-07-1999 Through 23-07-1999",

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TY - JOUR

T1 - Ultrafast carrier-carrier scattering in Al x Ga 1-x As/GaAs quantum wells

AU - Sun, Kien-Wen

AU - Song, T. S.

AU - Sun, C. K.

AU - Wang, J. C.

AU - Wang, S. Y.

AU - Lee, C. P.

PY - 1999

Y1 - 1999

N2 - Time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al0.32Ga0.68As/GaAs quantum wells are presented. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier-carrier scattering as the injected carrier densities increased toward 1011 cm-2.

AB - Time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al0.32Ga0.68As/GaAs quantum wells are presented. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier-carrier scattering as the injected carrier densities increased toward 1011 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=0033342346&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00386-5

DO - 10.1016/S0921-4526(99)00386-5

M3 - Conference article

AN - SCOPUS:0033342346

SN - 0921-4526

VL - 272

SP - 387

EP - 390

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)

Y2 - 19 July 1999 through 23 July 1999

ER -

Ultrafast carrier-carrier scattering in Al _x Ga _1-x As/GaAs quantum wells

Abstract

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