Ultra-thin Hf0.5Zr0.5O2 ferroelectric tunnel junction with high current density

Yueh Hua Chu; Hsin Hui Huang; Yu Hao Chen; Chien Hua Hsu; Pei Jer Tzeng; Shyh Shyuan Sheu; Wei Chung Lo; Chih I. Wu; Tuo-Hung Hou

doi:10.1109/VLSI-TSA51926.2021.9440107

Ultra-thin Hf_0.5Zr_0.5O₂ferroelectric tunnel junction with high current density

Yueh Hua Chu, Hsin Hui Huang, Yu Hao Chen, Chien Hua Hsu, Pei Jer Tzeng, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu, Tuo-Hung Hou^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

18 Scopus citations

Abstract

Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf0.5Zr0.5O2 (HZO) is investigated. The high current density up to 100 A/cm2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing. The insertion of a thin Al2O3 interfacial layer is found critical to alter the switching polarity and increase current density.

Original language	English
Title of host publication	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665419345
DOIs	https://doi.org/10.1109/VLSI-TSA51926.2021.9440107
State	Published - 19 Apr 2021
Event	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan Duration: 19 Apr 2021 → 22 Apr 2021

Publication series

Name	VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference	2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Country/Territory	Taiwan
City	Hsinchu
Period	19/04/21 → 22/04/21

Access to Document

10.1109/VLSI-TSA51926.2021.9440107

Cite this

Chu, Y. H., Huang, H. H., Chen, Y. H., Hsu, C. H., Tzeng, P. J., Sheu, S. S., Lo, W. C., Wu, C. I., & Hou, T.-H. (2021). Ultra-thin Hf_0.5Zr_0.5O₂ferroelectric tunnel junction with high current density. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings Article 9440107 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA51926.2021.9440107

Chu, Yueh Hua ; Huang, Hsin Hui ; Chen, Yu Hao et al. / Ultra-thin Hf_0.5Zr_0.5O₂ferroelectric tunnel junction with high current density. VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

@inproceedings{3cc1da45b86a4c4099f3b9d4de733f40,

title = "Ultra-thin Hf0.5Zr0.5O2 ferroelectric tunnel junction with high current density",

abstract = "Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf0.5Zr0.5O2 (HZO) is investigated. The high current density up to 100 A/cm2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing. The insertion of a thin Al2O3 interfacial layer is found critical to alter the switching polarity and increase current density. ",

author = "Chu, {Yueh Hua} and Huang, {Hsin Hui} and Chen, {Yu Hao} and Hsu, {Chien Hua} and Tzeng, {Pei Jer} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Wu, {Chih I.} and Tuo-Hung Hou",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 ; Conference date: 19-04-2021 Through 22-04-2021",

year = "2021",

month = apr,

day = "19",

doi = "10.1109/VLSI-TSA51926.2021.9440107",

language = "English",

series = "VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings",

address = "美國",

}

Chu, YH, Huang, HH, Chen, YH, Hsu, CH, Tzeng, PJ, Sheu, SS, Lo, WC, Wu, CI & Hou, T-H 2021, Ultra-thin Hf_0.5Zr_0.5O₂ferroelectric tunnel junction with high current density. in VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings., 9440107, VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings, Institute of Electrical and Electronics Engineers Inc., 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021, Hsinchu, Taiwan, 19/04/21. https://doi.org/10.1109/VLSI-TSA51926.2021.9440107

Ultra-thin Hf_0.5Zr_0.5O₂ferroelectric tunnel junction with high current density. / Chu, Yueh Hua; Huang, Hsin Hui; Chen, Yu Hao et al.
VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2021. 9440107 (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultra-thin Hf0.5Zr0.5O2 ferroelectric tunnel junction with high current density

AU - Chu, Yueh Hua

AU - Huang, Hsin Hui

AU - Chen, Yu Hao

AU - Hsu, Chien Hua

AU - Tzeng, Pei Jer

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

AU - Wu, Chih I.

AU - Hou, Tuo-Hung

PY - 2021/4/19

Y1 - 2021/4/19

N2 - Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf0.5Zr0.5O2 (HZO) is investigated. The high current density up to 100 A/cm2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing. The insertion of a thin Al2O3 interfacial layer is found critical to alter the switching polarity and increase current density.

AB - Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf0.5Zr0.5O2 (HZO) is investigated. The high current density up to 100 A/cm2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing. The insertion of a thin Al2O3 interfacial layer is found critical to alter the switching polarity and increase current density.

UR - http://www.scopus.com/inward/record.url?scp=85108139527&partnerID=8YFLogxK

U2 - 10.1109/VLSI-TSA51926.2021.9440107

DO - 10.1109/VLSI-TSA51926.2021.9440107

M3 - Conference contribution

AN - SCOPUS:85108139527

T3 - VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

BT - VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021

Y2 - 19 April 2021 through 22 April 2021

ER -

Chu YH, Huang HH, Chen YH, Hsu CH, Tzeng PJ, Sheu SS et al. Ultra-thin Hf_0.5Zr_0.5O₂ferroelectric tunnel junction with high current density. In VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2021. 9440107. (VLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings). doi: 10.1109/VLSI-TSA51926.2021.9440107