Ultra-thin Hf0.5Zr0.5Oferroelectric tunnel junction with high current density

Yueh Hua Chu, Hsin Hui Huang, Yu Hao Chen, Chien Hua Hsu, Pei Jer Tzeng, Shyh Shyuan Sheu, Wei Chung Lo, Chih I. Wu, Tuo-Hung Hou*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

14 Scopus citations

Abstract

Ferroelectric tunnel junction (FTJ) with ultrathin 3 nm-thick Hf0.5Zr0.5O2 (HZO) is investigated. The high current density up to 100 A/cm2 is at least 10 times higher than that in previously reported HZO FTJs. It is suitable for future nanoscale FTJ with a GΩ cell resistance for the application of in-memory computing. The insertion of a thin Al2O3 interfacial layer is found critical to alter the switching polarity and increase current density.

Original languageEnglish
Title of host publicationVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665419345
DOIs
StatePublished - 19 Apr 2021
Event2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan
Duration: 19 Apr 202122 Apr 2021

Publication series

NameVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Country/TerritoryTaiwan
CityHsinchu
Period19/04/2122/04/21

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