Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

Yang Kyu Choi; Kazuya Asano; Nick Lindert; Vivek Subramanian; Tsu Jae King; Jeffrey Bokor; Chen-Ming Hu

doi:Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

Yang Kyu Choi^*, Kazuya Asano, Nick Lindert, Vivek Subramanian, Tsu Jae King, Jeffrey Bokor, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

84 Scopus citations

Abstract

An ultra-thin body SOI nMOSFET is demonstrated as a promising structure for deep-sub-tenth micron CMOS technology. 40nm channel length is achieved with the ultra-thin body which suppresses the short-channel effect. A 12nm-gate-length CMOS should be attainable if a 4nm ultra-thin body is used.

Original language	English
Pages (from-to)	919-921
Number of pages	3
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/Ultra-thin body SOI MOSFET for deep-sub-tenth micron era
State	Published - 1999
Event	1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999

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Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

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title = "Ultra-thin body SOI MOSFET for deep-sub-tenth micron era",

abstract = "An ultra-thin body SOI nMOSFET is demonstrated as a promising structure for deep-sub-tenth micron CMOS technology. 40nm channel length is achieved with the ultra-thin body which suppresses the short-channel effect. A 12nm-gate-length CMOS should be attainable if a 4nm ultra-thin body is used.",

author = "Choi, {Yang Kyu} and Kazuya Asano and Nick Lindert and Vivek Subramanian and King, {Tsu Jae} and Jeffrey Bokor and Chen-Ming Hu",

year = "1999",

doi = "Ultra-thin body SOI MOSFET for deep-sub-tenth micron era",

language = "English",

pages = "919--921",

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T1 - Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

AU - Choi, Yang Kyu

AU - Asano, Kazuya

AU - Lindert, Nick

AU - Subramanian, Vivek

AU - King, Tsu Jae

AU - Bokor, Jeffrey

AU - Hu, Chen-Ming

PY - 1999

Y1 - 1999

N2 - An ultra-thin body SOI nMOSFET is demonstrated as a promising structure for deep-sub-tenth micron CMOS technology. 40nm channel length is achieved with the ultra-thin body which suppresses the short-channel effect. A 12nm-gate-length CMOS should be attainable if a 4nm ultra-thin body is used.

AB - An ultra-thin body SOI nMOSFET is demonstrated as a promising structure for deep-sub-tenth micron CMOS technology. 40nm channel length is achieved with the ultra-thin body which suppresses the short-channel effect. A 12nm-gate-length CMOS should be attainable if a 4nm ultra-thin body is used.

UR - http://www.scopus.com/inward/record.url?scp=0033314091&partnerID=8YFLogxK

U2 - Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

DO - Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

M3 - Conference article

AN - SCOPUS:0033314091

SN - 0163-1918

SP - 919

EP - 921

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - 1999 IEEE International Devices Meeting (IEDM)

Y2 - 5 December 1999 through 8 December 1999

ER -

Ultra-thin body SOI MOSFET for deep-sub-tenth micron era

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