Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications

Zhong Jie Hong, Demin Liu, Han Wen Hu, Ming Chang Lin, Tsau Hua Hsieh, Kuan Neng Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

9 Scopus citations

Abstract

In this study, using metal passivation (Au or Pd), chip-level Cu to Cu bonding with 15 x 15 μm2 bump size and 15 μm bump pitch has been achieved at 180 °C for 30 seconds under the atmosphere. The good bonding results have been carefully validated by analyzing SEM, TEM, EDS, and shear test. Despite the small bonding pad and fine pitch, the high bonding strength (27.9 MPa) can be still obtained, showing the high feasibility of this bonding structure for chiplet heterogeneous integration.

Original languageEnglish
Title of host publicationProceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages347-352
Number of pages6
ISBN (Electronic)9780738145235
DOIs
StatePublished - 2021
Event71st IEEE Electronic Components and Technology Conference, ECTC 2021 - Virtual, Online, United States
Duration: 1 Jun 20214 Jul 2021

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2021-June
ISSN (Print)0569-5503

Conference

Conference71st IEEE Electronic Components and Technology Conference, ECTC 2021
Country/TerritoryUnited States
CityVirtual, Online
Period1/06/214/07/21

Keywords

  • 3D IC
  • Cu to Cu Bonding
  • Low Temperature Bonding

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