Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications

Zhong Jie Hong; Demin Liu; Han Wen Hu; Ming Chang Lin; Tsau Hua Hsieh; Kuan Neng Chen

doi:10.1109/ECTC32696.2021.00065

Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications

Zhong Jie Hong, Demin Liu, Han Wen Hu, Ming Chang Lin, Tsau Hua Hsieh, Kuan Neng Chen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

In this study, using metal passivation (Au or Pd), chip-level Cu to Cu bonding with 15 x 15 μm² bump size and 15 μm bump pitch has been achieved at 180 °C for 30 seconds under the atmosphere. The good bonding results have been carefully validated by analyzing SEM, TEM, EDS, and shear test. Despite the small bonding pad and fine pitch, the high bonding strength (27.9 MPa) can be still obtained, showing the high feasibility of this bonding structure for chiplet heterogeneous integration.

Original language	English
Title of host publication	Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	347-352
Number of pages	6
ISBN (Electronic)	9780738145235
DOIs	https://doi.org/10.1109/ECTC32696.2021.00065
State	Published - 2021
Event	71st IEEE Electronic Components and Technology Conference, ECTC 2021 - Virtual, Online, United States Duration: 1 Jun 2021 → 4 Jul 2021

Publication series

Name	Proceedings - Electronic Components and Technology Conference
Volume	2021-June
ISSN (Print)	0569-5503

Conference

Conference	71st IEEE Electronic Components and Technology Conference, ECTC 2021
Country/Territory	United States
City	Virtual, Online
Period	1/06/21 → 4/07/21

Keywords

3D IC
Cu to Cu Bonding
Low Temperature Bonding

Access to Document

10.1109/ECTC32696.2021.00065

Cite this

Hong, Z. J., Liu, D., Hu, H. W., Lin, M. C., Hsieh, T. H., & Chen, K. N. (2021). Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications. In Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021 (pp. 347-352). (Proceedings - Electronic Components and Technology Conference; Vol. 2021-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECTC32696.2021.00065

Hong, Zhong Jie ; Liu, Demin ; Hu, Han Wen et al. / Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications. Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 347-352 (Proceedings - Electronic Components and Technology Conference).

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title = "Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications",

abstract = "In this study, using metal passivation (Au or Pd), chip-level Cu to Cu bonding with 15 x 15 μm2 bump size and 15 μm bump pitch has been achieved at 180 °C for 30 seconds under the atmosphere. The good bonding results have been carefully validated by analyzing SEM, TEM, EDS, and shear test. Despite the small bonding pad and fine pitch, the high bonding strength (27.9 MPa) can be still obtained, showing the high feasibility of this bonding structure for chiplet heterogeneous integration.",

keywords = "3D IC, Cu to Cu Bonding, Low Temperature Bonding",

author = "Hong, {Zhong Jie} and Demin Liu and Hu, {Han Wen} and Lin, {Ming Chang} and Hsieh, {Tsau Hua} and Chen, {Kuan Neng}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE; 71st IEEE Electronic Components and Technology Conference, ECTC 2021 ; Conference date: 01-06-2021 Through 04-07-2021",

year = "2021",

doi = "10.1109/ECTC32696.2021.00065",

language = "English",

series = "Proceedings - Electronic Components and Technology Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "347--352",

booktitle = "Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021",

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Hong, ZJ, Liu, D, Hu, HW, Lin, MC, Hsieh, TH & Chen, KN 2021, Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications. in Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021. Proceedings - Electronic Components and Technology Conference, vol. 2021-June, Institute of Electrical and Electronics Engineers Inc., pp. 347-352, 71st IEEE Electronic Components and Technology Conference, ECTC 2021, Virtual, Online, United States, 1/06/21. https://doi.org/10.1109/ECTC32696.2021.00065

Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications. / Hong, Zhong Jie; Liu, Demin; Hu, Han Wen et al.
Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 347-352 (Proceedings - Electronic Components and Technology Conference; Vol. 2021-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications

AU - Hong, Zhong Jie

AU - Liu, Demin

AU - Hu, Han Wen

AU - Lin, Ming Chang

AU - Hsieh, Tsau Hua

AU - Chen, Kuan Neng

PY - 2021

Y1 - 2021

N2 - In this study, using metal passivation (Au or Pd), chip-level Cu to Cu bonding with 15 x 15 μm2 bump size and 15 μm bump pitch has been achieved at 180 °C for 30 seconds under the atmosphere. The good bonding results have been carefully validated by analyzing SEM, TEM, EDS, and shear test. Despite the small bonding pad and fine pitch, the high bonding strength (27.9 MPa) can be still obtained, showing the high feasibility of this bonding structure for chiplet heterogeneous integration.

AB - In this study, using metal passivation (Au or Pd), chip-level Cu to Cu bonding with 15 x 15 μm2 bump size and 15 μm bump pitch has been achieved at 180 °C for 30 seconds under the atmosphere. The good bonding results have been carefully validated by analyzing SEM, TEM, EDS, and shear test. Despite the small bonding pad and fine pitch, the high bonding strength (27.9 MPa) can be still obtained, showing the high feasibility of this bonding structure for chiplet heterogeneous integration.

KW - 3D IC

KW - Cu to Cu Bonding

KW - Low Temperature Bonding

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U2 - 10.1109/ECTC32696.2021.00065

DO - 10.1109/ECTC32696.2021.00065

M3 - Conference contribution

AN - SCOPUS:85124656600

T3 - Proceedings - Electronic Components and Technology Conference

SP - 347

EP - 352

BT - Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 71st IEEE Electronic Components and Technology Conference, ECTC 2021

Y2 - 1 June 2021 through 4 July 2021

ER -

Hong ZJ, Liu D, Hu HW, Lin MC, Hsieh TH, Chen KN. Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications. In Proceedings - IEEE 71st Electronic Components and Technology Conference, ECTC 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 347-352. (Proceedings - Electronic Components and Technology Conference). doi: 10.1109/ECTC32696.2021.00065

Ultra-High Strength Cu-Cu Bonding under Low Thermal Budget for Chiplet Heterogeneous Applications

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