U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

Ming Hung Wu; Ming Chun Hong; Ching Shih; Yao Jen Chang; Yu Chen Hsin; Shih Ching Chiu; Kuan Ming Chen; Yi Hui Su; Chih Yao Wang; Shan Yi Yang; Guan Long Chen; Hsin Han Lee; Sk Ziaur Rahaman; I. Jung Wang; Chen Yi Shih; Tsun Chun Chang; Jeng Hua Wei; Shyh Shyuan Sheu; Wei Chung Lo; Shih Chieh Chang; Tuo Hung Hou

doi:10.23919/VLSITechnologyandCir57934.2023.10185336

U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

Ming Hung Wu^*, Ming Chun Hong, Ching Shih, Yao Jen Chang, Yu Chen Hsin, Shih Ching Chiu, Kuan Ming Chen, Yi Hui Su, Chih Yao Wang, Shan Yi Yang, Guan Long Chen, Hsin Han Lee, Sk Ziaur Rahaman, I. Jung Wang, Chen Yi Shih, Tsun Chun Chang, Jeng Hua Wei, Shyh Shyuan Sheu, Wei Chung Lo, Shih Chieh ChangTuo Hung Hou^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

U-MRAM, an enabler of a diode-selected cross-point MRAM array, is demonstrated using a mature device structure identical to STT-MRAM. U-MRAM exploits the probabilistic switching of thermal fluctuations using a single write voltage. The asymmetric synthetic antiferromagnetic layer (SAF) enables promising UMRAM properties, including low voltage (0.6 V), high speed (10 ns), excellent endurance (> 10 10), and long retention (>10 years) without an external magnetic field. Diode-selected U-MRAM is a strong candidate for future high-density embedded memory.

Original language	English
Title of host publication	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9784863488069
DOIs	https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185336
State	Published - 2023
Event	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 - Kyoto, Japan Duration: 11 Jun 2023 → 16 Jun 2023

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2023-June
ISSN (Print)	0743-1562

Conference

Conference	2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023
Country/Territory	Japan
City	Kyoto
Period	11/06/23 → 16/06/23

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10.23919/VLSITechnologyandCir57934.2023.10185336

Cite this

Wu, M. H., Hong, M. C., Shih, C., Chang, Y. J., Hsin, Y. C., Chiu, S. C., Chen, K. M., Su, Y. H., Wang, C. Y., Yang, S. Y., Chen, G. L., Lee, H. H., Rahaman, S. Z., Wang, I. J., Shih, C. Y., Chang, T. C., Wei, J. H., Sheu, S. S., Lo, W. C., ... Hou, T. H. (2023). U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. In 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2023-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185336

Wu, Ming Hung ; Hong, Ming Chun ; Shih, Ching et al. / U-MRAM : Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology).

@inproceedings{5599a6be72de42fca89f78b35ec6445c,

title = "U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory",

abstract = "U-MRAM, an enabler of a diode-selected cross-point MRAM array, is demonstrated using a mature device structure identical to STT-MRAM. U-MRAM exploits the probabilistic switching of thermal fluctuations using a single write voltage. The asymmetric synthetic antiferromagnetic layer (SAF) enables promising UMRAM properties, including low voltage (0.6 V), high speed (10 ns), excellent endurance (> 10 10), and long retention (>10 years) without an external magnetic field. Diode-selected U-MRAM is a strong candidate for future high-density embedded memory.",

author = "Wu, {Ming Hung} and Hong, {Ming Chun} and Ching Shih and Chang, {Yao Jen} and Hsin, {Yu Chen} and Chiu, {Shih Ching} and Chen, {Kuan Ming} and Su, {Yi Hui} and Wang, {Chih Yao} and Yang, {Shan Yi} and Chen, {Guan Long} and Lee, {Hsin Han} and Rahaman, {Sk Ziaur} and Wang, {I. Jung} and Shih, {Chen Yi} and Chang, {Tsun Chun} and Wei, {Jeng Hua} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Chang, {Shih Chieh} and Hou, {Tuo Hung}",

note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 ; Conference date: 11-06-2023 Through 16-06-2023",

year = "2023",

doi = "10.23919/VLSITechnologyandCir57934.2023.10185336",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023",

address = "美國",

}

Wu, MH, Hong, MC, Shih, C, Chang, YJ, Hsin, YC, Chiu, SC, Chen, KM, Su, YH, Wang, CY, Yang, SY, Chen, GL, Lee, HH, Rahaman, SZ, Wang, IJ, Shih, CY, Chang, TC, Wei, JH, Sheu, SS, Lo, WC, Chang, SC & Hou, TH 2023, U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. in 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Digest of Technical Papers - Symposium on VLSI Technology, vol. 2023-June, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, Kyoto, Japan, 11/06/23. https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185336

U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. / Wu, Ming Hung; Hong, Ming Chun; Shih, Ching et al.
2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2023-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - U-MRAM

T2 - 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023

AU - Wu, Ming Hung

AU - Hong, Ming Chun

AU - Shih, Ching

AU - Chang, Yao Jen

AU - Hsin, Yu Chen

AU - Chiu, Shih Ching

AU - Chen, Kuan Ming

AU - Su, Yi Hui

AU - Wang, Chih Yao

AU - Yang, Shan Yi

AU - Chen, Guan Long

AU - Lee, Hsin Han

AU - Rahaman, Sk Ziaur

AU - Wang, I. Jung

AU - Shih, Chen Yi

AU - Chang, Tsun Chun

AU - Wei, Jeng Hua

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

AU - Chang, Shih Chieh

AU - Hou, Tuo Hung

PY - 2023

Y1 - 2023

N2 - U-MRAM, an enabler of a diode-selected cross-point MRAM array, is demonstrated using a mature device structure identical to STT-MRAM. U-MRAM exploits the probabilistic switching of thermal fluctuations using a single write voltage. The asymmetric synthetic antiferromagnetic layer (SAF) enables promising UMRAM properties, including low voltage (0.6 V), high speed (10 ns), excellent endurance (> 10 10), and long retention (>10 years) without an external magnetic field. Diode-selected U-MRAM is a strong candidate for future high-density embedded memory.

AB - U-MRAM, an enabler of a diode-selected cross-point MRAM array, is demonstrated using a mature device structure identical to STT-MRAM. U-MRAM exploits the probabilistic switching of thermal fluctuations using a single write voltage. The asymmetric synthetic antiferromagnetic layer (SAF) enables promising UMRAM properties, including low voltage (0.6 V), high speed (10 ns), excellent endurance (> 10 10), and long retention (>10 years) without an external magnetic field. Diode-selected U-MRAM is a strong candidate for future high-density embedded memory.

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U2 - 10.23919/VLSITechnologyandCir57934.2023.10185336

DO - 10.23919/VLSITechnologyandCir57934.2023.10185336

M3 - Conference contribution

AN - SCOPUS:85167601282

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 11 June 2023 through 16 June 2023

ER -

Wu MH, Hong MC, Shih C, Chang YJ, Hsin YC, Chiu SC et al. U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. In 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSITechnologyandCir57934.2023.10185336

U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory

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