U-MRAM PUF: A Novel Unipolar-MRAM for Power and Area Efficient Hardware Root of Trust

Ching Shih, Ming Chun Hong, Chih Yao Wang, Guan Long Chen, Hsin Han Lee, Kuan Ming Chen, Bo Chen Chiou, Yao Jen Chang, Shan Yi Yang, Sin You Huang, Chiao Yun Lo, Yi Hui Su, I. Jung Wang, Chen Yi Shih, Shih Ching Chiu, Yu Chen Hsin, Jeng Hua Wei, Shyh Shyuan Sheu, Wei Chung Lo, Shih Chieh ChangTuo Hung Hou*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

By harnessing probabilistic thermal fluctuations, unipolar MRAM (U-MRAM) utilizes a single write voltage without an external field to achieve high-speed (10ns) true random number generation and storage simultaneously. A high-density diode-selected cross-point U-MRAM PUF array could be a potential candidate for an area and power-efficient hardware root of trust.

Original languageEnglish
Title of host publication2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350360349
DOIs
StatePublished - 2024
Event2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Hsinchu, Taiwan
Duration: 22 Apr 202425 Apr 2024

Publication series

Name2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings

Conference

Conference2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024
Country/TerritoryTaiwan
CityHsinchu
Period22/04/2425/04/24

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