Two-Transistor Metal-Ferroelectric-Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part I: Compact Modeling

Ming Hung Wu, Chen Yi Cho, Hsin Hui Huang, Tz Shiuan Huang, I. Ting Wang, Wen Yueh Jang, Shou Zen Chang, Tuo Hung Hou*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The two-transistor metal-ferroelectric-metal field-effect transistor (2T-MFMFET), a new back-end-of-line (BEOL) compatible ferroelectric (FE) memory, is recently proposed. 2T-MFMFET is designed to achieve all the critical features of embedded nonvolatile memory (eNVM) at the advanced logic nodes, namely, process compatibility, high retention, excellent endurance, low operating voltage, and superior area scalability. In this study, we detail the operation principles of 2T-MFMFET, including both the memory cell and memory array. Furthermore, a compact model of 2T-MFMFET is developed to evaluate its design space, which shows promise for a low operating voltage of 2 V with a low polarization charge density of less than 3 µC/cm2. Additionally, 2T-MFMFET shows a 136% improvement in area density compared to the static random access memory and negligible read/write disturbance in the array.

Original languageEnglish
Pages (from-to)6262-6267
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume70
Issue number12
DOIs
StatePublished - 2023

Keywords

  • Compact modeling
  • embedded nonvolatile memory (eNVM)
  • metal-ferroelectric-metal (MFM)

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