Two-Transistor Metal-Ferroelectric-Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part I: Compact Modeling

Ming Hung Wu; Chen Yi Cho; Hsin Hui Huang; Tz Shiuan Huang; I. Ting Wang; Wen Yueh Jang; Shou Zen Chang; Tuo Hung Hou

doi:10.1109/TED.2023.3314713

Two-Transistor Metal-Ferroelectric-Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part I: Compact Modeling

Ming Hung Wu, Chen Yi Cho, Hsin Hui Huang, Tz Shiuan Huang, I. Ting Wang, Wen Yueh Jang, Shou Zen Chang, Tuo Hung Hou^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The two-transistor metal-ferroelectric-metal field-effect transistor (2T-MFMFET), a new back-end-of-line (BEOL) compatible ferroelectric (FE) memory, is recently proposed. 2T-MFMFET is designed to achieve all the critical features of embedded nonvolatile memory (eNVM) at the advanced logic nodes, namely, process compatibility, high retention, excellent endurance, low operating voltage, and superior area scalability. In this study, we detail the operation principles of 2T-MFMFET, including both the memory cell and memory array. Furthermore, a compact model of 2T-MFMFET is developed to evaluate its design space, which shows promise for a low operating voltage of 2 V with a low polarization charge density of less than 3 µC/cm². Additionally, 2T-MFMFET shows a 136% improvement in area density compared to the static random access memory and negligible read/write disturbance in the array.

Original language	English
Pages (from-to)	6262-6267
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	70
Issue number	12
DOIs	https://doi.org/10.1109/TED.2023.3314713
State	Published - 2023

Keywords

Compact modeling
embedded nonvolatile memory (eNVM)
metal-ferroelectric-metal (MFM)

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10.1109/TED.2023.3314713

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title = "Two-Transistor Metal-Ferroelectric-Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part I: Compact Modeling",

abstract = "The two-transistor metal-ferroelectric-metal field-effect transistor (2T-MFMFET), a new back-end-of-line (BEOL) compatible ferroelectric (FE) memory, is recently proposed. 2T-MFMFET is designed to achieve all the critical features of embedded nonvolatile memory (eNVM) at the advanced logic nodes, namely, process compatibility, high retention, excellent endurance, low operating voltage, and superior area scalability. In this study, we detail the operation principles of 2T-MFMFET, including both the memory cell and memory array. Furthermore, a compact model of 2T-MFMFET is developed to evaluate its design space, which shows promise for a low operating voltage of 2 V with a low polarization charge density of less than 3 µC/cm2. Additionally, 2T-MFMFET shows a 136% improvement in area density compared to the static random access memory and negligible read/write disturbance in the array.",

keywords = "Compact modeling, embedded nonvolatile memory (eNVM), metal-ferroelectric-metal (MFM)",

author = "Wu, {Ming Hung} and Cho, {Chen Yi} and Huang, {Hsin Hui} and Huang, {Tz Shiuan} and Wang, {I. Ting} and Jang, {Wen Yueh} and Chang, {Shou Zen} and Hou, {Tuo Hung}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",

year = "2023",

doi = "10.1109/TED.2023.3314713",

language = "English",

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AU - Wu, Ming Hung

AU - Cho, Chen Yi

AU - Huang, Hsin Hui

AU - Huang, Tz Shiuan

AU - Wang, I. Ting

AU - Jang, Wen Yueh

AU - Chang, Shou Zen

AU - Hou, Tuo Hung

PY - 2023

Y1 - 2023

N2 - The two-transistor metal-ferroelectric-metal field-effect transistor (2T-MFMFET), a new back-end-of-line (BEOL) compatible ferroelectric (FE) memory, is recently proposed. 2T-MFMFET is designed to achieve all the critical features of embedded nonvolatile memory (eNVM) at the advanced logic nodes, namely, process compatibility, high retention, excellent endurance, low operating voltage, and superior area scalability. In this study, we detail the operation principles of 2T-MFMFET, including both the memory cell and memory array. Furthermore, a compact model of 2T-MFMFET is developed to evaluate its design space, which shows promise for a low operating voltage of 2 V with a low polarization charge density of less than 3 µC/cm2. Additionally, 2T-MFMFET shows a 136% improvement in area density compared to the static random access memory and negligible read/write disturbance in the array.

AB - The two-transistor metal-ferroelectric-metal field-effect transistor (2T-MFMFET), a new back-end-of-line (BEOL) compatible ferroelectric (FE) memory, is recently proposed. 2T-MFMFET is designed to achieve all the critical features of embedded nonvolatile memory (eNVM) at the advanced logic nodes, namely, process compatibility, high retention, excellent endurance, low operating voltage, and superior area scalability. In this study, we detail the operation principles of 2T-MFMFET, including both the memory cell and memory array. Furthermore, a compact model of 2T-MFMFET is developed to evaluate its design space, which shows promise for a low operating voltage of 2 V with a low polarization charge density of less than 3 µC/cm2. Additionally, 2T-MFMFET shows a 136% improvement in area density compared to the static random access memory and negligible read/write disturbance in the array.

KW - Compact modeling

KW - embedded nonvolatile memory (eNVM)

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JO - IEEE Transactions on Electron Devices

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ER -

Two-Transistor Metal-Ferroelectric-Metal Field-Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part I: Compact Modeling

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