Abstract
Bulk GaN and InGaN green LEDs are investigated based on two-photon photoluminescence (PL) and current images. The analysis is performed with an inverted microscope and a galvano-mirror based scanning system. A Kerr-lens-mode-locked Ti:sapphire laser provided IR laser pulses of 150 fs tunable between 700-800 nm. Band-pass filters are used to select specific band for PL image.
| Original language | English |
|---|---|
| Pages (from-to) | 39-40 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 1 |
| DOIs | |
| State | Published - Nov 1999 |
| Event | Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA Duration: 8 Nov 1999 → 11 Nov 1999 |