Abstract
Bulk GaN and InGaN green LEDs are investigated based on two-photon photoluminescence (PL) and current images. The analysis is performed with an inverted microscope and a galvano-mirror based scanning system. A Kerr-lens-mode-locked Ti:sapphire laser provided IR laser pulses of 150 fs tunable between 700-800 nm. Band-pass filters are used to select specific band for PL image.
Original language | English |
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Pages (from-to) | 39-40 |
Number of pages | 2 |
Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
Volume | 1 |
DOIs | |
State | Published - Nov 1999 |
Event | Proceedings of the 1999 12th Annual Meeting IEEE Lasers and Electro-Optics Society (LEOS'99) - San Francisco, CA, USA Duration: 8 Nov 1999 → 11 Nov 1999 |