Abstract
In this study, epilayers of packaged indium gallium nitride light emitting diodes (LED's) are characterized by optical beam induced current (OBIC) and photoluminescence laser scanning microscopy through two-photon excitation. OBIC reveals spatial and electrical characteristics of LED's which can not be distinguished by photoluminescence. When compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on. The uniformity of these LED's OBIC images can also be related to their light emitting efficiency.
Original language | English |
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Pages (from-to) | 92-98 |
Number of pages | 7 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4082 |
DOIs | |
State | Published - 2000 |
Event | Optical Sensing, Imaging, and Manipulation for Biological and Biomedical Applications - Taipei, Taiwan Duration: 26 Jul 2000 → 28 Jul 2000 |