Two-photon optical-beam-induced current microscopy of indium gallium nitride light emitting diodes

Fu Jen Kao*, Mao Kuo Huang, Yung Shun Wang, Sheng Lung Huang, Ming Kwei Lee, Chi Kuang Sun, Ping chin Cheng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

In this study, epilayers of packaged indium gallium nitride light emitting diodes (LED's) are characterized by optical beam induced current (OBIC) and photoluminescence laser scanning microscopy through two-photon excitation. OBIC reveals spatial and electrical characteristics of LED's which can not be distinguished by photoluminescence. When compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on. The uniformity of these LED's OBIC images can also be related to their light emitting efficiency.

Original languageEnglish
Pages (from-to)92-98
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4082
DOIs
StatePublished - 2000
EventOptical Sensing, Imaging, and Manipulation for Biological and Biomedical Applications - Taipei, Taiwan
Duration: 26 Jul 200028 Jul 2000

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