Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes

Fu Jen Kao; Mao Kuo Huang; Yung Shun Wang; Sheng Lung Huang; Ming Kwei Lee; Chi Kuang Sun

doi:10.1364/OL.24.001407

Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes

Fu Jen Kao^*, Mao Kuo Huang, Yung Shun Wang, Sheng Lung Huang, Ming Kwei Lee, Chi Kuang Sun

^*Corresponding author for this work

Institute of Biophotonics

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

Epilayers of packaged indium gallium nitride light-emitting diodes (LED's) are characterized by optical-beam-induced current (OBIC) and photoluminescence laser-scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LED's are greatly reduced as a result of employing a longer excitation wavelength, with energy that is less than the bandgap of the top p layer. Compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on.

Original language	English
Pages (from-to)	1407-1409
Number of pages	3
Journal	Optics Letters
Volume	24
Issue number	20
DOIs	https://doi.org/10.1364/OL.24.001407
State	Published - 15 Oct 1999

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title = "Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes",

abstract = "Epilayers of packaged indium gallium nitride light-emitting diodes (LED's) are characterized by optical-beam-induced current (OBIC) and photoluminescence laser-scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LED's are greatly reduced as a result of employing a longer excitation wavelength, with energy that is less than the bandgap of the top p layer. Compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on.",

author = "Kao, {Fu Jen} and Huang, {Mao Kuo} and Wang, {Yung Shun} and Huang, {Sheng Lung} and Lee, {Ming Kwei} and Sun, {Chi Kuang}",

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AU - Kao, Fu Jen

AU - Huang, Mao Kuo

AU - Wang, Yung Shun

AU - Huang, Sheng Lung

AU - Lee, Ming Kwei

AU - Sun, Chi Kuang

PY - 1999/10/15

Y1 - 1999/10/15

N2 - Epilayers of packaged indium gallium nitride light-emitting diodes (LED's) are characterized by optical-beam-induced current (OBIC) and photoluminescence laser-scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LED's are greatly reduced as a result of employing a longer excitation wavelength, with energy that is less than the bandgap of the top p layer. Compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on.

AB - Epilayers of packaged indium gallium nitride light-emitting diodes (LED's) are characterized by optical-beam-induced current (OBIC) and photoluminescence laser-scanning microscopy through two-photon excitation. Light scattering and absorption in the packaging material and the p-doped top layer of the LED's are greatly reduced as a result of employing a longer excitation wavelength, with energy that is less than the bandgap of the top p layer. Compared with single-photon OBIC, two-photon OBIC imaging not only exhibits superior image quality but also reveals more clearly the characteristics of the epilayers that are being focused on.

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SP - 1407

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JO - Optics Letters

JF - Optics Letters

IS - 20

ER -

Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes

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