Two-dimensional solid-phase crystallization toward centimeter-scale monocrystalline layered MoTe2: Via two-step annealing

Chih Pin Lin, Hao Hua Hsu, Jyun Hong Huang, Yu Wei Kang, Chien Ting Wu, Yao Jen Lee, Chun Cheng Cheng, Yann Wen Lan, Wen Hao Chang, Lain Jong Li, Tuo Hung Hou*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The lack of effective synthesis techniques for achieving wafer-scale uniformity and high crystallinity remains one of the major obstacles for two-dimensional (2D) layered materials in practical applications. 2D solid-phase crystallization (2DSPC) is proposed based on the area-scalable and semiconductor-process-compatible sputtering and thermal annealing techniques. It successfully synthesizes few-layer 2H-MoTe2 with a monocrystalline grain size exceeding half a centimeter on an amorphous substrate of silicon dioxide. The extremely large grain size is made possible through a two-step annealing process in an inert atmosphere. The initial rapid thermal annealing at high temperatures produces hexagonal monocrystalline 2H-MoTe2 seeds with low density and the subsequent long-duration furnace annealing at low temperatures enlarges the monocrystalline domains only from the pre-existing seeds. The 2DSPC mechanism and its morphological evolution agree with the classical nucleation theory and kinetic Wulff construction theory, respectively. Our result suggests the promising potential of 2DSPC as a simple yet effective route for synthesizing future wafer-scale, high-quality 2D materials.

Original languageEnglish
Pages (from-to)15566-15576
Number of pages11
JournalJournal of Materials Chemistry C
Volume9
Issue number43
DOIs
StatePublished - 21 Nov 2021

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