TWO DIMENSIONAL NATURE OF DIFFUSED LINE CAPACITANCE IN COPLANAR MOS STRUCTURES.

Hiroshi Iwai; Kenji Taniguchi; Masami Konaka; Satoshi Maeda; Yoshio Nishi

doi:10.1109/iedm.1980.189940

TWO DIMENSIONAL NATURE OF DIFFUSED LINE CAPACITANCE IN COPLANAR MOS STRUCTURES.

Hiroshi Iwai^*, Kenji Taniguchi, Masami Konaka, Satoshi Maeda, Yoshio Nishi

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

Two dimensional nature of diffused line capacitance in the coplanar MOS LSI structure is investigated delineating importance of the side wall capacitance with decreasing feature size of devices. The effects of field channel stop ion implantation on the narrow channel effect, the field MOS threshold voltage and the junction breakdown voltage are also discussed toward optimization of coplanar process parameters.

Original language	English
Pages (from-to)	728-731
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/iedm.1980.189940
State	Published - 1980
Event	Tech Dig Int Electron Devices Meet - Washington, DC, USA Duration: 8 Dec 1980 → 10 Dec 1980

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10.1109/iedm.1980.189940

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title = "TWO DIMENSIONAL NATURE OF DIFFUSED LINE CAPACITANCE IN COPLANAR MOS STRUCTURES.",

abstract = "Two dimensional nature of diffused line capacitance in the coplanar MOS LSI structure is investigated delineating importance of the side wall capacitance with decreasing feature size of devices. The effects of field channel stop ion implantation on the narrow channel effect, the field MOS threshold voltage and the junction breakdown voltage are also discussed toward optimization of coplanar process parameters.",

author = "Hiroshi Iwai and Kenji Taniguchi and Masami Konaka and Satoshi Maeda and Yoshio Nishi",

year = "1980",

doi = "10.1109/iedm.1980.189940",

language = "English",

pages = "728--731",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "null ; Conference date: 08-12-1980 Through 10-12-1980",

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TY - JOUR

T1 - TWO DIMENSIONAL NATURE OF DIFFUSED LINE CAPACITANCE IN COPLANAR MOS STRUCTURES.

AU - Iwai, Hiroshi

AU - Taniguchi, Kenji

AU - Konaka, Masami

AU - Maeda, Satoshi

AU - Nishi, Yoshio

PY - 1980

Y1 - 1980

N2 - Two dimensional nature of diffused line capacitance in the coplanar MOS LSI structure is investigated delineating importance of the side wall capacitance with decreasing feature size of devices. The effects of field channel stop ion implantation on the narrow channel effect, the field MOS threshold voltage and the junction breakdown voltage are also discussed toward optimization of coplanar process parameters.

AB - Two dimensional nature of diffused line capacitance in the coplanar MOS LSI structure is investigated delineating importance of the side wall capacitance with decreasing feature size of devices. The effects of field channel stop ion implantation on the narrow channel effect, the field MOS threshold voltage and the junction breakdown voltage are also discussed toward optimization of coplanar process parameters.

UR - http://www.scopus.com/inward/record.url?scp=0019280716&partnerID=8YFLogxK

U2 - 10.1109/iedm.1980.189940

DO - 10.1109/iedm.1980.189940

M3 - Conference article

AN - SCOPUS:0019280716

SP - 728

EP - 731

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

Y2 - 8 December 1980 through 10 December 1980

ER -

TWO DIMENSIONAL NATURE OF DIFFUSED LINE CAPACITANCE IN COPLANAR MOS STRUCTURES.

Abstract

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