Two-Dimensional Nature of Diffused Layers and Certain Limitations in Scaling-Down Coplanar Structure

Hiroshi Iwai; Satoshi Maeda; Yoshio Nishi

doi:10.1109/JSSC.1982.1051726

Two-Dimensional Nature of Diffused Layers and Certain Limitations in Scaling-Down Coplanar Structure

Hiroshi Iwai, Satoshi Maeda, Yoshio Nishi

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

Abstract

Limitation of the coplanar technology to geometry miniaturization has been investigated. Two-dimensional nature of diffused line capacitance in a coplanar structure is investigated for the first time delineating importance of the sidewall capacitance with decreasing feature size of devices. The effects of field channel-stop ion implantation on the narrow-channel effect, the field MOS threshold voltage, and the junction breakdown voltage are also discussed.

Original language	English
Pages (from-to)	255-260
Number of pages	6
Journal	IEEE Journal of Solid-State Circuits
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/JSSC.1982.1051726
State	Published - Apr 1982

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10.1109/JSSC.1982.1051726

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abstract = "Limitation of the coplanar technology to geometry miniaturization has been investigated. Two-dimensional nature of diffused line capacitance in a coplanar structure is investigated for the first time delineating importance of the sidewall capacitance with decreasing feature size of devices. The effects of field channel-stop ion implantation on the narrow-channel effect, the field MOS threshold voltage, and the junction breakdown voltage are also discussed.",

author = "Hiroshi Iwai and Satoshi Maeda and Yoshio Nishi",

year = "1982",

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AB - Limitation of the coplanar technology to geometry miniaturization has been investigated. Two-dimensional nature of diffused line capacitance in a coplanar structure is investigated for the first time delineating importance of the sidewall capacitance with decreasing feature size of devices. The effects of field channel-stop ion implantation on the narrow-channel effect, the field MOS threshold voltage, and the junction breakdown voltage are also discussed.

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Two-Dimensional Nature of Diffused Layers and Certain Limitations in Scaling-Down Coplanar Structure

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